2N2060M

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

60MHz

Power - Max :

3W

Frequency - Transition :

60MHz

Current - Collector Cutoff (Max) :

2nA ICBO

Current - Collector (Ic) (Max) :

500mA

ECCN Code :

EAR99

Pbfree Code :

No

Terminal Position :

BOTTOM

Terminal Form :

Wire

Mounting Type :

Through Hole

Number of Elements :

2

JESD-609 Code :

e0

Number of Terminations :

6

Operating Temperature :

-65°C~200°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Published :

2017

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 5mA, 50mA

RoHS Status :

Non-RoHS Compliant

Packaging :

Bulk

Voltage - Collector Emitter Breakdown (Max) :

60V

Transistor Type :

2 NPN (Dual)

Reach Compliance Code :

not_compliant

Polarity/Channel Type :

NPN

Surface Mount :

No

Configuration :

SEPARATE, 2 ELEMENTS

JESD-30 Code :

O-MBCY-W6

Package / Case :

TO-78-6 Metal Can

Transistor Application :

AMPLIFIER

Qualification Status :

Not Qualified

HTS Code :

8541.21.00.95

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED