2N2060L

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

JESD-609 Code :

e0

Terminal Form :

Wire

Mount :

Through Hole

Published :

2002

Max Collector Current :

500mA

HTS Code :

8541.21.00.95

Terminal Position :

BOTTOM

Configuration :

SEPARATE, 2 ELEMENTS

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Transistor Type :

2 NPN (Dual)

Number of Terminations :

6

Power - Max :

2.12W

Current - Collector (Ic) (Max) :

500mA

Polarity/Channel Type :

NPN

Number of Pins :

6

Radiation Hardening :

No

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Max Power Dissipation :

600mW

Collector Emitter Voltage (VCEO) :

60V

Packaging :

Bulk

Factory Lead Time :

12 Weeks

Current - Collector Cutoff (Max) :

10μA ICBO

Mounting Type :

Through Hole

Number of Elements :

2

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-78-6 Metal Can

Operating Temperature :

-65°C~200°C TJ

Terminal Finish :

TIN LEAD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

100V

Pbfree Code :

No