2N2060

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Base Voltage (VCBO) :

100V

Operating Temperature :

-65°C~200°C TJ

Terminal Form :

Wire

Power - Max :

2.12W

Collector Emitter Voltage (VCEO) :

60V

Number of Terminations :

6

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Mount :

Through Hole

Published :

2002

Polarity/Channel Type :

NPN

Radiation Hardening :

No

Current - Collector (Ic) (Max) :

500mA

Packaging :

Bulk

Max Power Dissipation :

600mW

Number of Elements :

2

Transistor Element Material :

SILICON

Transistor Type :

2 NPN (Dual)

Configuration :

SEPARATE, 2 ELEMENTS

Package / Case :

TO-78-6 Metal Can

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN LEAD

HTS Code :

8541.21.00.95

Current - Collector Cutoff (Max) :

10μA ICBO

Number of Pins :

6

Terminal Position :

BOTTOM

Pbfree Code :

No

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

JESD-609 Code :

e0

RoHS Status :

Non-RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Max Collector Current :

500mA

Mounting Type :

Through Hole