2N2060

Manufacturer :

Central Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

600mW

Terminal Finish :

TIN LEAD

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

500mA

Configuration :

SEPARATE, 2 ELEMENTS

Max Collector Current :

500mA

Transistor Type :

2 NPN (Dual)

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 10mA 5V

Polarity/Channel Type :

NPN

Collector Base Voltage (VCBO) :

100V

Packaging :

Bulk

HTS Code :

8541.21.00.95

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Mounting Type :

Through Hole

Current - Collector Cutoff (Max) :

10μA ICBO

Number of Terminations :

6

Power - Max :

2.12W

Package / Case :

TO-78-6 Metal Can

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 50mA

Collector Emitter Voltage (VCEO) :

60V

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Radiation Hardening :

No

Number of Elements :

2

Terminal Form :

Wire

Published :

2002

Number of Pins :

6

Operating Temperature :

-65°C~200°C TJ

Mount :

Through Hole

RoHS Status :

Non-RoHS Compliant