ZXTC6719MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Frequency :

165MHz

Transistor Type :

NPN, PNP

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Published :

2011

Gain Bandwidth Product :

165MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V / 60 @ 1.5A 2V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Base Part Number :

ZXTC6719MC

ECCN Code :

EAR99

Element Configuration :

Dual

Pbfree Code :

yes

Current - Collector (Ic) (Max) :

4A 3A

Collector Emitter Voltage (VCEO) :

320mV

Vce Saturation (Max) @ Ib, Ic :

320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A

Peak Reflow Temperature (Cel) :

260

Transition Frequency :

165MHz

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

JESD-609 Code :

e4

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

4A

Additional Feature :

High Reliability

Number of Elements :

2

Max Collector Current :

3A

Number of Terminations :

8

Current - Collector Cutoff (Max) :

100nA

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

Collector Emitter Saturation Voltage :

10mV

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

2.45W

Collector Base Voltage (VCBO) :

100V

Polarity :

NPN, PNP

Case Connection :

COLLECTOR

Package / Case :

8-WDFN Exposed Pad

Pin Count :

8

Emitter Base Voltage (VEBO) :

7V

Frequency - Transition :

165MHz 190MHz

Factory Lead Time :

15 Weeks

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

1.7W

Number of Pins :

8

Collector Emitter Breakdown Voltage :

40V