ZXTC6719MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Power Dissipation :

1.7W

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Frequency - Transition :

165MHz 190MHz

Transistor Element Material :

SILICON

Continuous Collector Current :

4A

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

320mV

Polarity :

NPN, PNP

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 2A 2V / 60 @ 1.5A 2V

Max Breakdown Voltage :

40V

Mount :

Surface Mount

Base Part Number :

ZXTC6719MC

Emitter Base Voltage (VEBO) :

7V

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

320mV @ 200mA, 4A / 370mV @ 250mA, 2.5A

RoHS Status :

ROHS3 Compliant

Additional Feature :

High Reliability

Gain Bandwidth Product :

165MHz

Pbfree Code :

yes

Pin Count :

8

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Operating Temperature :

-55°C~150°C TJ

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

JESD-609 Code :

e4

Element Configuration :

Dual

Transition Frequency :

165MHz

Current - Collector (Ic) (Max) :

4A 3A

Current - Collector Cutoff (Max) :

100nA

Collector Emitter Breakdown Voltage :

40V

Case Connection :

COLLECTOR

Number of Terminations :

8

Collector Base Voltage (VCBO) :

100V

Number of Pins :

8

Collector Emitter Saturation Voltage :

10mV

Max Collector Current :

3A

Frequency :

165MHz

Published :

2011

Transistor Type :

NPN, PNP

Packaging :

Tape and Reel (TR)

Package / Case :

8-WDFN Exposed Pad

Power Dissipation :

2.45W

Number of Elements :

2

Factory Lead Time :

15 Weeks