ZXTC2062E6TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

20V

Current - Collector (Ic) (Max) :

4A 3.5A

Transistor Type :

NPN, PNP

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Number of Elements :

2

ECCN Code :

EAR99

Polarity :

NPN, PNP

Factory Lead Time :

13 Weeks

Radiation Hardening :

No

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

20V

Current - Collector Cutoff (Max) :

50nA ICBO

Contact Plating :

Tin

Power - Max :

1.1W

Vce Saturation (Max) @ Ib, Ic :

190mV @ 200mA, 4A / 250mV @ 175mA, 3.5A

Base Part Number :

Z2062

Gain Bandwidth Product :

290MHz

Published :

2006

Frequency :

215MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

280 @ 1A 2V / 170 @ 1A 2V

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.8mm

Emitter Base Voltage (VEBO) :

7V

Number of Pins :

6

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Terminations :

6

Power Dissipation :

1.7W

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Max Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Transition Frequency :

215MHz

Weight :

7.994566mg

Max Collector Current :

3.5A

Package / Case :

SOT-23-6

Pin Count :

6

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Length :

3.1mm

Frequency - Transition :

215MHz 290MHz

Collector Base Voltage (VCBO) :

100V

Height :

1.3mm

Max Power Dissipation :

1.7W