ZXTC2062E6TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

50nA ICBO

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

20V

Frequency - Transition :

215MHz 290MHz

Published :

2006

DC Current Gain (hFE) (Min) @ Ic, Vce :

280 @ 1A 2V / 170 @ 1A 2V

Emitter Base Voltage (VEBO) :

7V

Time@Peak Reflow Temperature-Max (s) :

40

Contact Plating :

Tin

Transition Frequency :

215MHz

Pin Count :

6

Number of Pins :

6

Transistor Type :

NPN, PNP

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.7W

Power - Max :

1.1W

Radiation Hardening :

No

Number of Elements :

2

Collector Base Voltage (VCBO) :

100V

Vce Saturation (Max) @ Ib, Ic :

190mV @ 200mA, 4A / 250mV @ 175mA, 3.5A

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

1.7W

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Polarity :

NPN, PNP

Gain Bandwidth Product :

290MHz

Mount :

Surface Mount

Number of Terminations :

6

Mounting Type :

Surface Mount

Pbfree Code :

yes

Terminal Form :

Gull wing

Length :

3.1mm

Base Part Number :

Z2062

Height :

1.3mm

Factory Lead Time :

13 Weeks

Lead Free :

Lead Free

ECCN Code :

EAR99

Frequency :

215MHz

Collector Emitter Breakdown Voltage :

20V

Current - Collector (Ic) (Max) :

4A 3.5A

JESD-609 Code :

e3

Max Collector Current :

3.5A

Width :

1.8mm

Package / Case :

SOT-23-6

Collector Emitter Voltage (VCEO) :

20V

Weight :

7.994566mg