ZXTC6717MCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Breakdown Voltage :

12V

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

310mV

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

7V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

310mV @ 50mA, 4.5A / 310mV @ 150mA, 4A

Gain Bandwidth Product :

120MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 200mA 2V 300 @ 100mA 2V

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

1.7W

Element Configuration :

Dual

Package / Case :

8-VDFN Exposed Pad

Pbfree Code :

yes

Max Breakdown Voltage :

12V

Number of Terminations :

8

Transition Frequency :

120MHz

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

40V

Additional Feature :

High Reliability

Voltage - Collector Emitter Breakdown (Max) :

15V 12V

Lead Free :

Lead Free

Mount :

Surface Mount

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN, PNP

Collector Emitter Saturation Voltage :

8mV

Current - Collector Cutoff (Max) :

100nA

JESD-609 Code :

e4

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

4.5A

Number of Elements :

2

Frequency - Transition :

120MHz 110MHz

REACH SVHC :

No SVHC

Number of Pins :

8

Factory Lead Time :

15 Weeks

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Case Connection :

COLLECTOR

Polarity :

NPN, PNP

Current - Collector (Ic) (Max) :

4.5A 4A

Max Collector Current :

4A

Published :

2010