ZXMP6A18DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

2.1W

Drain to Source Breakdown Voltage :

-60V

Current Rating :

-4.6A

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

55m Ω @ 3.5A, 10V

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Logic Level Gate

Width :

4mm

ECCN Code :

EAR99

Fall Time (Typ) :

23 ns

Turn On Delay Time :

4.6 ns

Lead Free :

Lead Free

Length :

5mm

Power Dissipation :

2.1W

Rise Time :

5.8ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

1580pF @ 30V

Power - Max :

1.8W

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

3.7A

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

55 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Number of Channels :

2

Weight :

73.992255mg

Pbfree Code :

yes

Element Configuration :

Dual

Height :

1.7mm

Number of Terminations :

8

Number of Pins :

8

JESD-609 Code :

e3

Number of Elements :

2

Threshold Voltage :

-1V

Continuous Drain Current (ID) :

-4.8A

FET Type :

2 P-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

3.7A

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Resistance :

55mOhm

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Factory Lead Time :

17 Weeks

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

-60V