ZX5T951GTA

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Mfr.Part #
ZX5T951GTA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 60V 5.5A SOT223-3
Stock
16,533
In Stock :
16,533

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
-7V
Transistor Element Material :
SILICON
Terminal Position :
Dual
Max Breakdown Voltage :
60V
Weight :
7.994566mg
Pbfree Code :
No
Gain Bandwidth Product :
120MHz
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
20nA ICBO
Collector Emitter Voltage (VCEO) :
60V
Continuous Collector Current :
-5.5A
Voltage - Rated DC :
-60V
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
40
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 2A 1V
Case Connection :
COLLECTOR
Terminal Form :
Gull wing
Frequency :
120MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
5.5A
Element Configuration :
Single
Transistor Type :
PNP
Max Power Dissipation :
3W
Transition Frequency :
120MHz
Polarity/Channel Type :
PNP
ECCN Code :
EAR99
Current Rating :
-5.5A
Operating Temperature :
-55°C~150°C TJ
Height :
1.65mm
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Collector Emitter Saturation Voltage :
-250mV
Mount :
Surface Mount
Radiation Hardening :
No
Terminal Finish :
Matte Tin (Sn)
Package / Case :
TO-261-4, TO-261AA
Base Part Number :
ZX5T951
REACH SVHC :
No SVHC
Collector Base Voltage (VCBO) :
100V
Mounting Type :
Surface Mount
Number of Pins :
4
Width :
3.7mm
Number of Terminations :
4
Packaging :
Tape and Reel (TR)
Pin Count :
4
Power Dissipation :
3W
Length :
6.7mm
Transistor Application :
SWITCHING
Factory Lead Time :
15 Weeks
Peak Reflow Temperature (Cel) :
260
Collector Emitter Breakdown Voltage :
60V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 500mA, 5A
Published :
2006
Datasheets
ZX5T951GTA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZX5T951GTA from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, Base Part Number:ZX5T951, Mounting Type:Surface Mount, Number of Pins:4, Number of Terminations:4, ZX5T951GTA pinout, ZX5T951GTA datasheet PDF, ZX5T951GTA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZX5T951GTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZX5T951GTA


PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

ZX5T951GTA Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500mA, 5A.Continuous collector voltages of -5.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -5.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 120MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 5.5A volts.

ZX5T951GTA Features


the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -5.5A
a transition frequency of 120MHz


ZX5T951GTA Applications


There are a lot of Diodes Incorporated
ZX5T951GTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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