ZX5T951GTA
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- Mfr.Part #
- ZX5T951GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 5.5A SOT223-3
- Stock
- 16,533
- In Stock ：
- 16,533
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Max Collector Current :
- 5.5A
- Package / Case :
- TO-261-4, TO-261AA
- Pin Count :
- 4
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 100V
- Height :
- 1.65mm
- Transition Frequency :
- 120MHz
- Number of Terminations :
- 4
- Base Part Number :
- ZX5T951
- Lead Free :
- Lead Free
- Published :
- 2006
- Current Rating :
- -5.5A
- Frequency :
- 120MHz
- Max Power Dissipation :
- 3W
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- No
- Continuous Collector Current :
- -5.5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 120MHz
- Voltage - Rated DC :
- -60V
- Weight :
- 7.994566mg
- Width :
- 3.7mm
- Length :
- 6.7mm
- Emitter Base Voltage (VEBO) :
- -7V
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 60V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- -250mV
- Power Dissipation :
- 3W
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500mA, 5A
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Collector Emitter Voltage (VCEO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- ZX5T951GTA
PNP -55°C~150°C TJ 20nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZX5T951GTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 500mA, 5A.Continuous collector voltages of -5.5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Its current rating is -5.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 120MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 5.5A volts.
ZX5T951GTA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 500mA, 5A
the emitter base voltage is kept at -7V
the current rating of this device is -5.5A
a transition frequency of 120MHz
ZX5T951GTA Applications
There are a lot of Diodes Incorporated
ZX5T951GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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