ZVP4525ZTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Turn On Delay Time :

1.53 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-285V

Radiation Hardening :

No

Power Dissipation :

1.2W

Gate Charge (Qg) (Max) @ Vgs :

3.45nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.205A

Pin Count :

3

Drain to Source Voltage (Vdss) :

250V

Vgs (Max) :

±40V

Vgs(th) (Max) @ Id :

2V @ 1mA

Resistance :

14Ohm

Transistor Element Material :

SILICON

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

14 Ω @ 200mA, 10V

Weight :

130.492855mg

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

205mA Ta

Pbfree Code :

No

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Lead Free :

Lead Free

Number of Elements :

1

Height :

1.6mm

REACH SVHC :

No SVHC

Current Rating :

-200mA

Number of Terminations :

3

Number of Channels :

1

JESD-609 Code :

e3

Continuous Drain Current (ID) :

205mA

Factory Lead Time :

17 Weeks

Package / Case :

TO-243AA

ECCN Code :

EAR99

Width :

2.6mm

Fall Time (Typ) :

3.78 ns

Input Capacitance (Ciss) (Max) @ Vds :

73pF @ 25V

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Length :

4.6mm

Peak Reflow Temperature (Cel) :

260

Published :

2001

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Voltage - Rated DC :

-250V

Power Dissipation-Max :

1.2W Ta

Drive Voltage (Max Rds On,Min Rds On) :

3.5V 10V

Gate to Source Voltage (Vgs) :

40V

Turn-Off Delay Time :

17.5 ns

Rise Time :

3.78ns

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Number of Pins :

4

JESD-30 Code :

R-PSSO-F3