ZVP4525GTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOW THRESHOLD

Power Dissipation-Max :

2W Ta

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Drain to Source Voltage (Vdss) :

250V

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 1mA

RoHS Status :

RoHS Compliant

FET Type :

P-Channel

Case Connection :

DRAIN

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G4

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

0.265A

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2012

Vgs (Max) :

±40V

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

265mA Ta

Terminal Form :

Gull wing

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

3.45nC @ 10V

Rds On (Max) @ Id, Vgs :

14 Ω @ 200mA, 10V

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

250V

Drive Voltage (Max Rds On,Min Rds On) :

3.5V 10V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Position :

Dual

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

73pF @ 25V