ZVP4105ASTOA
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- Mfr.Part #
- ZVP4105ASTOA
- Manufacturer
- Diodes Incorporated
- Package / Case
- E-Line-3
- Datasheet
- Download
- Description
- MOSFET P-CH 50V 175MA E-LINE
- Stock
- 3,415
- In Stock ：
- 3,415
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 50V
- Length :
- 4.77mm
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Turn On Delay Time :
- 10 ns
- Drain to Source Breakdown Voltage :
- -50V
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Wire
- Element Configuration :
- Single
- Height :
- 4.01mm
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 40pF @ 25V
- Weight :
- 453.59237mg
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 10 ns
- Current Rating :
- -175mA
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 175mA
- Radiation Hardening :
- No
- Rise Time :
- 10ns
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 10 Ω @ 100mA, 5V
- FET Type :
- P-Channel
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Published :
- 2012
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Width :
- 2.41mm
- Voltage - Rated DC :
- -50V
- Power Dissipation-Max :
- 625mW Ta
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 18 ns
- Lead Free :
- Lead Free
- Package / Case :
- E-Line-3
- Current - Continuous Drain (Id) @ 25°C :
- 175mA Ta
- JESD-30 Code :
- R-PSIP-W3
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 625mW
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Datasheets
- ZVP4105ASTOA
ZVP4105ASTOA Documents
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P-Channel Tape & Reel (TR) 10 Ω @ 100mA, 5V ±20V 40pF @ 25V 50V E-Line-3
ZVP4105ASTOA Overview
A device's maximum input capacitance is 40pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 175mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-50V, and this device has a drain-to-source breakdown voltage of -50V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 18 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 50V drain to source voltage (Vdss).This device uses no drive voltage (5V) to reduce its overall power consumption.
ZVP4105ASTOA Features
a continuous drain current (ID) of 175mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 18 ns
a 50V drain to source voltage (Vdss)
ZVP4105ASTOA Applications
There are a lot of Diodes Incorporated
ZVP4105ASTOA applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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