ZVP4525E6TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

14 Ω @ 200mA, 10V

Vgs(th) (Max) @ Id :

2V @ 1mA

Turn-Off Delay Time :

17.5 ns

Published :

2012

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Vgs (Max) :

±40V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.1W Ta

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Rise Time :

3.78ns

Drive Voltage (Max Rds On,Min Rds On) :

3.5V 10V

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

-250V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.1W

Current - Continuous Drain (Id) @ 25°C :

197mA Ta

Number of Terminations :

6

Current Rating :

-197mA

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

3.45nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

73pF @ 25V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G6

JESD-609 Code :

e3

Mount :

Surface Mount

Number of Elements :

1

Continuous Drain Current (ID) :

197mA

Transistor Element Material :

SILICON

Fall Time (Typ) :

3.78 ns

Package / Case :

SOT-23-6

Drain to Source Voltage (Vdss) :

250V

Drain Current-Max (Abs) (ID) :

0.197A

Gate to Source Voltage (Vgs) :

40V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Voltage - Rated DC :

-250V