ZVNL120ASTOB

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Terminal Finish :

MATTE TIN

Turn On Delay Time :

8 ns

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 25V

JESD-30 Code :

R-PSIP-W3

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

180mA Ta

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

4.01mm

Terminal Form :

Wire

Time@Peak Reflow Temperature-Max (s) :

40

Length :

4.77mm

Fall Time (Typ) :

8 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

10 Ω @ 250mA, 10V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

200V

Package / Case :

E-Line-3

Power Dissipation-Max :

700mW Ta

Mount :

Through Hole

JESD-609 Code :

e3

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Unknown

Pin Count :

3

Current Rating :

180mA

Width :

2.41mm

Power Dissipation :

700mW

Voltage - Rated DC :

200V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Rise Time :

8ns

Drive Voltage (Max Rds On,Min Rds On) :

3V 5V

Turn-Off Delay Time :

20 ns

Continuous Drain Current (ID) :

180mA

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Weight :

453.59237mg

ECCN Code :

EAR99

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole