ZVNL110GTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Rise Time :

12ns

Turn On Delay Time :

7 ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

600mA

Pulsed Drain Current-Max (IDM) :

6A

Current - Continuous Drain (Id) @ 25°C :

600mA Ta

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

4.5Ohm

Voltage - Rated DC :

100V

Number of Terminations :

4

Pin Count :

4

Power Dissipation :

2W

Turn-Off Delay Time :

15 ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

3 Ω @ 500mA, 10V

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2012

JESD-30 Code :

R-PDSO-G4

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Number of Elements :

1

Drain to Source Breakdown Voltage :

100V

Configuration :

Single

Reach Compliance Code :

Unknown

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

1.1W Ta

Terminal Finish :

MATTE TIN

Lead Free :

Lead Free

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

13 ns

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 25V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Package / Case :

TO-261-4, TO-261AA

Mounting Type :

Surface Mount

Current Rating :

600mA

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain Current-Max (Abs) (ID) :

0.6A