ZVNL120ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

10 Ω @ 250mA, 10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Mount :

Through Hole

Rise Time :

8ns

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

180mA

JESD-30 Code :

R-PSIP-W3

Voltage - Rated DC :

200V

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

200V

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

180mA Ta

Weight :

453.59237mg

Fall Time (Typ) :

8 ns

RoHS Status :

RoHS Compliant

Number of Channels :

1

Power Dissipation-Max :

700mW Ta

Lead Free :

Lead Free

Number of Terminations :

3

Reach Compliance Code :

Unknown

Pin Count :

3

Element Configuration :

Single

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Turn On Delay Time :

8 ns

Terminal Finish :

MATTE TIN

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

E-Line-3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 25V

Qualification Status :

Not Qualified

Terminal Form :

Wire

Power Dissipation :

700mW

Drive Voltage (Max Rds On,Min Rds On) :

3V 5V

Published :

2012

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

180mA

Vgs (Max) :

±20V

Turn-Off Delay Time :

20 ns