ZVNL120ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

3V 5V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

700mW

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Package / Case :

E-Line-3

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Through Hole

Continuous Drain Current (ID) :

180mA

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Weight :

453.59237mg

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Current Rating :

180mA

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

85pF @ 25V

Rise Time :

8ns

Qualification Status :

Not Qualified

Voltage - Rated DC :

200V

Turn-Off Delay Time :

20 ns

Terminal Finish :

MATTE TIN

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSIP-W3

Turn On Delay Time :

8 ns

Drain to Source Breakdown Voltage :

200V

Number of Elements :

1

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

180mA Ta

Mounting Type :

Through Hole

JESD-609 Code :

e3

Power Dissipation-Max :

700mW Ta

Reach Compliance Code :

Unknown

Rds On (Max) @ Id, Vgs :

10 Ω @ 250mA, 10V

Terminal Form :

Wire

Pin Count :

3

Fall Time (Typ) :

8 ns