ZVNL110ASTOA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Power Dissipation-Max :

700mW Ta

Terminal Form :

Wire

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Turn-Off Delay Time :

15 ns

Number of Elements :

1

Fall Time (Typ) :

12 ns

Drain-source On Resistance-Max :

4.5Ohm

Power Dissipation :

700mW

Operating Mode :

ENHANCEMENT MODE

Weight :

453.59237mg

Rise Time :

12ns

Pin Count :

3

Current Rating :

320mA

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Drain to Source Breakdown Voltage :

100V

Qualification Status :

Not Qualified

Turn On Delay Time :

7 ns

Current - Continuous Drain (Id) @ 25°C :

320mA Ta

JESD-609 Code :

e3

Published :

2012

Drain Current-Max (Abs) (ID) :

0.32A

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

FET Type :

N-Channel

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

3 Ω @ 500mA, 10V

Element Configuration :

Single

Package / Case :

E-Line-3

Input Capacitance (Ciss) (Max) @ Vds :

75pF @ 25V

JESD-30 Code :

R-PSIP-W3

Continuous Drain Current (ID) :

320mA

Transistor Application :

SWITCHING

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

100V

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)