ZHB6792TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Mounting Type :

Surface Mount

Radiation Hardening :

No

Transistor Type :

2 NPN, 2 PNP (H-Bridge)

Base Part Number :

ZHB6792

Mount :

Surface Mount

Transition Frequency :

150MHz

Packaging :

Cut Tape (CT)

Gain Bandwidth Product :

150MHz

Polarity :

NPN, PNP

Pbfree Code :

No

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 2A

Frequency :

150MHz

Package / Case :

8-SMD, Gull Wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

300 @ 100mA 2V

Frequency - Transition :

100MHz

Length :

6.7mm

Current Rating :

1A

Power - Max :

1.25W

Max Breakdown Voltage :

70V

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

1A

Height :

1.6mm

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Number of Elements :

4

Collector Emitter Breakdown Voltage :

70V

Number of Terminations :

8

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Max Power Dissipation :

2W

Power Dissipation :

2W

Collector Base Voltage (VCBO) :

70V

Transistor Element Material :

SILICON

Published :

2012

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

70V

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

15 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Continuous Collector Current :

1A

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

-500mV

Width :

3.7mm

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

40