ZHB6790TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Peak Reflow Temperature (Cel) :

260

Current Rating :

2A

Number of Elements :

4

Transistor Type :

2 NPN, 2 PNP (H-Bridge)

Max Breakdown Voltage :

40V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1A 2V

Power Dissipation :

2W

Collector Base Voltage (VCBO) :

50V

Mount :

Surface Mount

Factory Lead Time :

15 Weeks

ECCN Code :

EAR99

Max Collector Current :

2A

Published :

2006

Lead Free :

Lead Free

Frequency - Transition :

100MHz

Package / Case :

8-SMD, Gull Wing

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Radiation Hardening :

No

Polarity :

NPN, PNP

REACH SVHC :

No SVHC

Frequency :

150MHz

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

2W

Operating Temperature :

-55°C~150°C TJ

Width :

3.7mm

Collector Emitter Saturation Voltage :

-750mV

Number of Pins :

8

Pin Count :

8

Configuration :

COMPLEX

Terminal Finish :

Matte Tin (Sn)

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 2A

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

Transition Frequency :

100MHz

Gain Bandwidth Product :

150MHz

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Length :

6.7mm

Height :

1.6mm

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

40V

Base Part Number :

ZHB6790

Number of Terminations :

8

Collector Emitter Voltage (VCEO) :

40V

Power - Max :

1.25W