ZHB6718TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Operating Temperature :

-55°C~150°C TJ

Length :

6.7mm

Collector Emitter Breakdown Voltage :

20V

Max Breakdown Voltage :

20V

Number of Pins :

8

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2A 2V

ECCN Code :

EAR99

Pbfree Code :

No

Width :

3.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

100μA

Polarity :

NPN, PNP

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

130mV

Base Part Number :

ZHB6718

Transistor Type :

2 NPN, 2 PNP (H-Bridge)

Power Dissipation :

2W

Mounting Type :

Surface Mount

Max Power Dissipation :

2W

Factory Lead Time :

15 Weeks

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Pin Count :

8

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

20V

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

8

Gain Bandwidth Product :

140MHz

Number of Elements :

4

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Continuous Collector Current :

2.5A

Mount :

Surface Mount

Frequency :

140MHz

Peak Reflow Temperature (Cel) :

260

Current Rating :

2.5A

Terminal Position :

Dual

Max Collector Current :

2.5A

Configuration :

COMPLEX

Transition Frequency :

140MHz

Published :

1997

JESD-609 Code :

e3

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

200mV @ 50mA, 2.5A

Power - Max :

1.25W

Package / Case :

8-SMD, Gull Wing

Height :

1.6mm

Collector Base Voltage (VCBO) :

20V