VT6M1T2CR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

Terminal Position :

Dual

JESD-609 Code :

e1

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

7.1pF @ 10V

Transistor Element Material :

SILICON

Terminal Finish :

TIN SILVER COPPER

Max Power Dissipation :

120mW

FET Feature :

Logic Level Gate, 1.2V Drive

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-F6

Continuous Drain Current (ID) :

100mA

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 100mA, 4.5V

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

0.1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount

Package / Case :

6-SMD, Flat Leads

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Pin Count :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Factory Lead Time :

16 Weeks

Published :

1997

Number of Terminations :

6

Drain to Source Voltage (Vdss) :

20V

FET Type :

N and P-Channel

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Vgs(th) (Max) @ Id :

1V @ 100µA

Drain-source On Resistance-Max :

4.2Ohm

Power - Max :

120mW