VT6K1T2CR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

1V @ 100µA

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

7.1pF @ 10V

JESD-609 Code :

e1

Number of Elements :

2

Number of Channels :

2

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

38 ns

Drain to Source Breakdown Voltage :

20V

Pin Count :

6

Terminal Finish :

TIN SILVER COPPER

Time@Peak Reflow Temperature-Max (s) :

10

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

4ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Published :

2011

Drain to Source Voltage (Vdss) :

20V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

8V

Turn-Off Delay Time :

20 ns

FET Feature :

Logic Level Gate, 1.2V Drive

Max Power Dissipation :

120mW

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Turn On Delay Time :

5 ns

Drain Current-Max (Abs) (ID) :

0.1A

Continuous Drain Current (ID) :

100mA

Package / Case :

6-SMD, Flat Leads

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 100mA, 4.5V

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

Mount :

Surface Mount