VQ1006P-2

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

400mA

Published :

2009

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

2A

Number of Elements :

4

Max Power Dissipation :

2W

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

90V

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 25V

Packaging :

Tube

Feedback Cap-Max (Crss) :

10 pF

Terminal Finish :

TIN LEAD

Drain to Source Voltage (Vdss) :

90V

Pbfree Code :

No

Power Dissipation :

1.3W

Radiation Hardening :

No

Mount :

Through Hole

FET Type :

4 N-Channel

JESD-609 Code :

e0

Gate to Source Voltage (Vgs) :

20V

Turn Off Time-Max (toff) :

10ns

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 1A, 10V

Number of Pins :

14

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

14-DIP

Number of Terminations :

14

Drain-source On Resistance-Max :

3.5Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

PDIP

Turn On Time-Max (ton) :

10ns