VQ1001P-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Power - Max :

2W

Drain to Source Voltage (Vdss) :

30V

Radiation Hardening :

No

FET Type :

4 N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

830mA

Input Capacitance :

110pF

Max Power Dissipation :

2W

Number of Elements :

4

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

830mA

Number of Pins :

14

Mounting Type :

Through Hole

FET Feature :

Logic Level Gate

Input Capacitance (Ciss) (Max) @ Vds :

110pF @ 15V

Mount :

Through Hole

Rds On Max :

1.75 Ω

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

1.75Ohm

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1.75Ohm @ 200mA, 5V

Supplier Device Package :

14-DIP

RoHS Status :

ROHS3 Compliant

Power Dissipation :

2W

Max Operating Temperature :

150°C

Lead Free :

Lead Free