VQ1004P
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- Mfr.Part #
- VQ1004P
- Manufacturer
- Vishay
- Package / Case
- CDIP
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 0.4A TO-205
- Stock
- 59
- In Stock ：
- 59
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Length :
- 19.56mm
- Continuous Drain Current (ID) :
- 460mA
- Max Power Dissipation :
- 2W
- Power Dissipation :
- 2W
- Drain to Source Resistance :
- 3.5Ohm
- RoHS Status :
- Non-RoHS Compliant
- Height :
- 3.05mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e0
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 60V
- Number of Pins :
- 14
- Number of Channels :
- 4
- Drain to Source Breakdown Voltage :
- 60V
- Published :
- 2005
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 7.87mm
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Pin Count :
- 14
- Mount :
- Through Hole
- Package / Case :
- CDIP
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- VQ1004P
±20V 60V CDIP
VQ1004P Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 460mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 3.5Ohm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.
VQ1004P Features
a continuous drain current (ID) of 460mA
a drain-to-source breakdown voltage of 60V voltage
single MOSFETs transistor is 3.5Ohm
a 60V drain to source voltage (Vdss)
VQ1004P Applications
There are a lot of Vishay Siliconix
VQ1004P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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