US6X5TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Collector Emitter Voltage (VCEO) :

12V

Emitter Base Voltage (VEBO) :

6V

Transition Frequency :

360MHz

JESD-609 Code :

e2

Max Breakdown Voltage :

12V

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Finish :

TIN COPPER

Collector Emitter Breakdown Voltage :

12V

Pbfree Code :

yes

Published :

2004

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

hFE Min :

270

Max Collector Current :

2A

Vce Saturation (Max) @ Ib, Ic :

180mV @ 50mA, 1A

Terminal Position :

Dual

Radiation Hardening :

No

Number of Elements :

1

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Gain Bandwidth Product :

360MHz

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Base Voltage (VCBO) :

15V

Package / Case :

6-SMD, Flat Leads

Transistor Application :

AMPLIFIER

Base Part Number :

US6X

Voltage - Rated DC :

12V

Pin Count :

6

Current Rating :

2A

Operating Temperature :

150°C TJ

Lead Free :

Lead Free

Element Configuration :

Single

Polarity/Channel Type :

NPN

Number of Pins :

6

Mounting Type :

Surface Mount

Max Power Dissipation :

1W

Transistor Element Material :

SILICON