US6X3TR
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- Mfr.Part #
- US6X3TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 3A TUMT6
- Stock
- 2,400
- In Stock ：
- 2,400
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector (Ic) (Max) :
- 3A
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 15V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- 6-SMD, Flat Leads
- Number of Pins :
- 6
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 250mV
- Transition Frequency :
- 360MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Max Power Dissipation :
- 400mW
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 6
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Max Collector Current :
- 3A
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- hFE Min :
- 270
- Transistor Application :
- AMPLIFIER
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- TIN COPPER
- Number of Terminations :
- 6
- Collector Emitter Breakdown Voltage :
- 12V
- Base Part Number :
- US6X
- JESD-609 Code :
- e2
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Gain Bandwidth Product :
- 360MHz
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Datasheets
- US6X3TR
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount
US6X3TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 30mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 360MHz.During maximum operation, collector current can be as low as 3A volts.
US6X3TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
US6X3TR Applications
There are a lot of ROHM Semiconductor
US6X3TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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