US6X3TR
- Mfr.Part #
- US6X3TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 3A TUMT6
- Stock
- 2,400
- In Stock :
- 2,400
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 360MHz
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Transition Frequency :
- 360MHz
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- JESD-609 Code :
- e2
- Collector Emitter Breakdown Voltage :
- 12V
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- hFE Min :
- 270
- Collector Emitter Voltage (VCEO) :
- 250mV
- Number of Terminations :
- 6
- Pin Count :
- 6
- Number of Pins :
- 6
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Current - Collector (Ic) (Max) :
- 3A
- Base Part Number :
- US6X
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- Emitter Base Voltage (VEBO) :
- 6V
- Max Collector Current :
- 3A
- Package / Case :
- 6-SMD, Flat Leads
- Published :
- 2007
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- TIN COPPER
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 15V
- Max Power Dissipation :
- 400mW
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Datasheets
- US6X3TR

NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount
US6X3TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 30mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 360MHz.During maximum operation, collector current can be as low as 3A volts.
US6X3TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
US6X3TR Applications
There are a lot of ROHM Semiconductor
US6X3TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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