US6X3TR
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- Mfr.Part #
- US6X3TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 12V 3A TUMT6
- Stock
- 2,400
- In Stock ：
- 2,400
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 6
- hFE Min :
- 270
- Max Power Dissipation :
- 400mW
- Base Part Number :
- US6X
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 15V
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 12V
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- 6-SMD, Flat Leads
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- TIN COPPER
- Element Configuration :
- Single
- JESD-609 Code :
- e2
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Pin Count :
- 6
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 360MHz
- Number of Terminations :
- 6
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 250mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 500mA 2V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- Current - Collector (Ic) (Max) :
- 3A
- Transition Frequency :
- 360MHz
- Max Collector Current :
- 3A
- Datasheets
- US6X3TR
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount
US6X3TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 30mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 360MHz.During maximum operation, collector current can be as low as 3A volts.
US6X3TR Features
the DC current gain for this device is 270 @ 500mA 2V
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
US6X3TR Applications
There are a lot of ROHM Semiconductor
US6X3TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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