US6X4TR
- Mfr.Part #
- US6X4TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 30V 2A TUMT6
- Stock
- 41,108
- In Stock :
- 41,108
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Transition Frequency :
- 280MHz
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- hFE Min :
- 270
- Gain Bandwidth Product :
- 280MHz
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Max Collector Current :
- 2A
- Power - Max :
- 400mW
- JESD-609 Code :
- e2
- Max Power Dissipation :
- 1W
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Finish :
- TIN COPPER
- Current - Collector (Ic) (Max) :
- 2A
- ECCN Code :
- EAR99
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 6
- Base Part Number :
- US6X
- Published :
- 2007
- Pin Count :
- 6
- Radiation Hardening :
- No
- Number of Pins :
- 6
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 30V
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 75mA, 1.5A
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- 6-SMD, Flat Leads
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- US6X4TR

NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount
US6X4TR Overview
This device has a DC current gain of 270 @ 200mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 280MHz.The maximum collector current is 2A volts.
US6X4TR Features
the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz
US6X4TR Applications
There are a lot of ROHM Semiconductor
US6X4TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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