UNR411100A

Manufacturer :

Panasonic

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Voltage - Rated DC :

-50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Max Breakdown Voltage :

50V

Current Rating :

-100mA

Mounting Type :

Through Hole

Package / Case :

3-SSIP

Voltage - Collector Emitter Breakdown (Max) :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Voltage (VCEO) :

250mV

Mount :

Through Hole

Supplier Device Package :

NS-B1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

100mA

RoHS Status :

RoHS Compliant

Published :

2003

Max Collector Current :

100mA

Lead Free :

Lead Free

Transistor Type :

PNP - Pre-Biased

Power - Max :

300mW

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

10 kOhms

Resistor - Base (R1) :

10 kOhms

Frequency - Transition :

80MHz

Packaging :

Tape and Box (TB)

Max Power Dissipation :

300mW