UMZ8NTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pbfree Code :

yes

hFE Min :

120

Element Configuration :

Dual

Current - Collector (Ic) (Max) :

150mA 500mA

Operating Temperature :

150°C TJ

JESD-609 Code :

e2

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN, PNP

Transition Frequency :

180MHz

Published :

2008

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

400mV

Terminal Finish :

Tin/Copper (Sn/Cu)

Polarity :

NPN, PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Emitter Base Voltage (VEBO) :

6V

Radiation Hardening :

No

Pin Count :

6

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V / 270 @ 10mA 2V

Max Collector Current :

500mA

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

50V 12V

Terminal Form :

Gull wing

HTS Code :

8541.21.00.75

Mount :

Surface Mount

Number of Pins :

6

Transistor Application :

SWITCHING

Collector Base Voltage (VCBO) :

60V

Number of Elements :

2

Max Power Dissipation :

150mW

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Gain Bandwidth Product :

260MHz

Collector Emitter Breakdown Voltage :

12V

ECCN Code :

EAR99

Frequency - Transition :

180MHz 260MHz

Time@Peak Reflow Temperature-Max (s) :

10