UMT1NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

60V

Transistor Type :

2 PNP (Dual)

Number of Terminations :

6

Radiation Hardening :

No

Voltage - Rated DC :

-50V

Max Collector Current :

150mA

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e2

Max Breakdown Voltage :

50V

Length :

2mm

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Transition Frequency :

140MHz

Element Configuration :

Dual

Factory Lead Time :

13 Weeks

Terminal Finish :

Tin/Copper (Sn/Cu)

Current Rating :

-150mA

Mount :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.21.00.75

Terminal Form :

Gull wing

Max Power Dissipation :

150mW

Transistor Application :

AMPLIFIER

Base Part Number :

*MT1

Number of Pins :

6

Collector Emitter Saturation Voltage :

500mV

Height :

900μm

Max Frequency :

140MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity :

PNP

Collector Emitter Voltage (VCEO) :

50V

Collector Emitter Breakdown Voltage :

50V

Width :

1.25mm

REACH SVHC :

No SVHC

Operating Temperature :

150°C TJ

Number of Elements :

2

hFE Min :

120

Emitter Base Voltage (VEBO) :

-6V

Output Voltage :

50V

ECCN Code :

EAR99

VCEsat-Max :

0.5 V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Gain Bandwidth Product :

140MHz

Time@Peak Reflow Temperature-Max (s) :

10

Pbfree Code :

yes

Continuous Collector Current :

-150mA

Pin Count :

6

Published :

2004

Transistor Element Material :

SILICON