UMH3NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Published :

2004

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Number of Elements :

2

Voltage - Rated DC :

50V

Base Part Number :

*MH3

Polarity :

NPN

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

10

hFE Min :

100

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

150mW

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

50V

Mount :

Surface Mount

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e2

HTS Code :

8541.21.00.75

Continuous Collector Current :

100mA

Min Operating Temperature :

-55°C

Pin Count :

6

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

VCEsat-Max :

0.3 V

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Collector Current :

100mA

Operating Supply Voltage :

50V

ECCN Code :

EAR99

Factory Lead Time :

13 Weeks

Power Dissipation :

150mW

Additional Feature :

Digital

Collector Base Voltage (VCBO) :

50V

Terminal Finish :

Tin/Copper (Sn/Cu)

Current Rating :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Resistor - Base (R1) :

4.7k Ω

Element Configuration :

Dual

REACH SVHC :

No SVHC

Max Breakdown Voltage :

50V

Pbfree Code :

yes

Number of Pins :

6

Transition Frequency :

250MHz

Frequency - Transition :

250MHz

Max Output Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V