UMH33NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Terminal Position :

Dual

Subcategory :

Transistors

Manufacturer :

Rohm Semiconductor

Transistor Type :

2 NPN - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

100mV @ 3mA, 30mA

Package / Case :

6-TSSOP, SC-88, SOT-363

Peak Reflow Temperature (Cel) :

260

Product Type :

BJTs - Bipolar Transistors - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

820 @ 10mA, 5V

Resistor - Emitter Base (R2) :

-

Current - Collector (Ic) (Max) :

400mA

Maximum Operating Temperature :

+ 150 C

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Collector Current (DC) :

0.4(A)

Lead Free :

Lead Free

Package Type :

UMT

Collector Current-Max (IC) :

0.4 A

Configuration :

Dual

Emitter-Collector Voltage (Max) :

20(V)

Product Status :

Active

Package Shape :

RECTANGULAR

Product Category :

Bipolar Transistors - Pre-Biased

Polarity/Channel Type :

NPN

Package :

Digi-Reel?

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Terminals :

6

Brand :

Rohm Semiconductor

Series :

-

Surface Mount :

yes

DC Current Gain :

820@10MA@5V

JESD-30 Code :

R-PDSO-G6

DC Current Gain-Min (hFE) :

820

Transistor Application :

SWITCHING

Power Dissipation :

0.15(W)

Mounting Style :

SMD/SMT

Transistor Polarity :

NPN

Frequency - Transition :

35MHz

Packaging :

Tape and Reel

Collector-Emitter Voltage-Max :

20 V

JESD-609 Code :

e2

Resistor - Base (R1) :

2.2kOhms

RoHS :

Details

Current - Collector Cutoff (Max) :

500nA (ICBO)

Supplier Device Package :

UMT6

Reach Compliance Code :

Compliant

Number of Elements :

2

Voltage - Collector Emitter Breakdown (Max) :

20V

Lifecycle Status :

Production (Last Updated: 2 years ago)

Additional Feature :

BUILT IN BIAS RESISTOR

Type :

NPN

Continuous Collector Current :

0.4 A

Terminal Finish :

Tin/Copper (Sn/Cu)

Power - Max :

150mW