UMH2NTN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

300mV

HTS Code :

8541.21.00.75

Voltage - Rated DC :

50V

Termination :

SMD/SMT

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Pin Count :

6

Continuous Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Resistor - Base (R1) :

47k Ω

Power Dissipation :

150mW

ECCN Code :

EAR99

Terminal Form :

Gull wing

VCEsat-Max :

0.3 V

Current - Collector Cutoff (Max) :

500nA

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

10

Max Power Dissipation :

150mW

REACH SVHC :

No SVHC

Transition Frequency :

250MHz

Factory Lead Time :

13 Weeks

Number of Elements :

2

Transistor Type :

2 NPN - Pre-Biased (Dual)

Polarity :

NPN

Number of Terminations :

6

Max Operating Temperature :

150°C

Terminal Finish :

TIN COPPER

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Pbfree Code :

yes

Mount :

Surface Mount

Published :

2004

Transistor Application :

SWITCHING

JESD-609 Code :

e2

Min Operating Temperature :

-55°C

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Frequency - Transition :

250MHz

Lead Free :

Lead Free

Current Rating :

30mA

Resistor - Emitter Base (R2) :

47k Ω

hFE Min :

68

Mounting Type :

Surface Mount

Base Part Number :

*MH2

Max Breakdown Voltage :

50V

Package / Case :

6-TSSOP, SC-88, SOT-363

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1