UMH2NFHATN

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

150mW

Factory Lead Time :

13 Weeks

Frequency - Transition :

250MHz

Number of Elements :

2

Current - Collector Cutoff (Max) :

500nA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

REACH SVHC :

Unknown

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

50V

Published :

2014

Surface Mount :

yes

Transition Frequency :

250MHz

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Package / Case :

6-VSSOP, SC-88, SOT-363

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transistor Type :

2 NPN - Pre-Biased (Dual)

Resistor - Emitter Base (R2) :

47k Ω

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector (Ic) (Max) :

100mA

Resistor - Base (R1) :

47k Ω

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

ECCN Code :

EAR99

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Series :

Automotive, AEC-Q101

Mounting Type :

Surface Mount