TPCF8402(TE85L,F,M

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Arrays

Base Part Number :

TPC*402

Published :

2003

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

4A 3.2A

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-SMD, Flat Lead

Continuous Drain Current (ID) :

4A

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

50m Ω @ 2A, 10V

Fall Time (Typ) :

4 ns

Power Dissipation :

1.35W

FET Type :

N and P-Channel

Max Power Dissipation :

330mW

FET Feature :

Logic Level Gate

Rise Time :

5.2ns

Number of Pins :

8