TPCC8066-H,LQ(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

700mW Ta 17W Tc

Series :

U-MOSVII-H

JESD-30 Code :

S-PDSO-F5

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Vgs (Max) :

±20V

Radiation Hardening :

No

FET Type :

N-Channel

DS Breakdown Voltage-Min :

30V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 10V

Drain to Source Voltage (Vdss) :

30V

Rise Time :

2.1ns

Transistor Application :

SWITCHING

Package / Case :

8-PowerVDFN

Drain-source On Resistance-Max :

0.019Ohm

Mount :

Surface Mount

Mounting Type :

Surface Mount

Number of Pins :

8

Terminal Form :

Flat

Operating Temperature :

150°C TJ

Terminal Position :

Dual

Case Connection :

DRAIN

Fall Time (Typ) :

2.3 ns

Number of Terminations :

5

Published :

2009

Rds On (Max) @ Id, Vgs :

15m Ω @ 5.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.3V @ 100μA

Number of Elements :

1

Continuous Drain Current (ID) :

11A

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V