TPCC8002-H(TE12L,Q

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

700mW Ta 30W Tc

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

RoHS Status :

RoHS Compliant

Rise Time :

2.8ns

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

Fall Time (Typ) :

5.9 ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

22A

Rds On (Max) @ Id, Vgs :

8.3mOhm @ 11A, 10V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Mounting Type :

Surface Mount

Rds On Max :

8.3 mΩ

Package / Case :

8-PowerVDFN

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Input Capacitance :

2.5nF

Supplier Device Package :

8-TSON Advance (3.3x3.3)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

U-MOSV-H

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Published :

2009

Vgs (Max) :

±20V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)