TPCC8008(TE12L,QM)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Power Dissipation-Max :

700mW Ta 30W Tc

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 10V

Vgs (Max) :

±25V

Package / Case :

8-PowerVDFN

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

25A Ta

Continuous Drain Current (ID) :

25A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

6.8m Ω @ 12.5A, 10V

Number of Pins :

8

Rise Time :

7.9ns

Operating Temperature :

150°C TJ

Series :

U-MOSIV

FET Type :

N-Channel

Packaging :

Cut Tape (CT)

Fall Time (Typ) :

16 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

25V

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2.5V @ 1A

Mounting Type :

Surface Mount

Mount :

Surface Mount