TPCC8065-H,LQ(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Power Dissipation-Max :

700mW Ta 18W Tc

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

13A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

13A

Published :

2009

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Series :

U-MOSVII-H

Package / Case :

8-PowerVDFN

Factory Lead Time :

12 Weeks

Number of Pins :

8

FET Type :

N-Channel

Fall Time (Typ) :

2.1 ns

Rise Time :

2ns

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

11.4m Ω @ 6.5A, 10V

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.3V @ 200μA

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 10V