TP0620N3-G

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Mfr.Part #
TP0620N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 200V 175MA TO92-3
Stock
9,404
In Stock :
9,404

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Terminal Finish :
Matte Tin (Sn)
Package Type :
TO-92
Number of Pins :
3
Operating Temp Range :
-55C to 150C
Factory Lead Time :
5 Weeks
Rise Time :
15ns
Transistor Type :
1 P-Channel
Lead Free :
Lead Free
Qualification Status :
Not Qualified
Operating Mode :
ENHANCEMENT MODE
Package :
Bag
Subcategory :
MOSFETs
Product Type :
MOSFET
Published :
2013
Peak Reflow Temperature (Cel) :
Not Applicable
Polarity :
P
Maximum Operating Temperature :
+ 150 C
Fall Time (Typ) :
16 ns
Element Configuration :
Single
Operating Temperature Classification :
Military
Continuous Drain Current (ID) :
-175mA
Transistor Polarity :
P-Channel
Turn On Delay Time :
10 ns
RoHS :
Details
Continuous Drain Current :
0.175(A)
Packaging :
Bulk
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Rad Hardened :
No
Drain to Source Voltage (Vdss) :
200V
Vgs (Max) :
±20V
Resistance :
12Ohm
Length :
5.21mm
Gate to Source Voltage (Vgs) :
20V
FET Type :
P-Channel
Number of Channels :
1
Turn-Off Delay Time :
20 ns
Current - Continuous Drain (Id) @ 25°C :
175mA Tj
Series :
--
Height :
5.33mm
ECCN Code :
EAR99
Mounting Type :
Through Hole
Supplier Device Package :
TO-92-3
Terminal Form :
Wire
Power Dissipation-Max :
1W Ta
Weight :
219.992299mg
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Minimum Operating Temperature :
- 55 C
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Active
FET Feature :
--
Power Dissipation :
1W
Type :
Power MOSFET
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 25V
Configuration :
Single
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Mounting :
Through Hole
Number of Terminations :
3
Width :
4.19mm
Drain to Source Breakdown Voltage :
-200V
Product Category :
MOSFET
Terminal Position :
BOTTOM
Gate-Source Voltage (Max) :
±20(V)
Pin Count :
3
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Mounting Style :
Through Hole
Power Dissipation (Max) :
1W (Ta)
Brand :
Microchip Technology
Drain-Source On-Volt :
200(V)
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Additional Feature :
LOW THRESHOLD
Channel Mode :
Enhancement
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
Base Product Number :
TP0620
Manufacturer :
Microchip
Datasheets
TP0620N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP0620N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Channels:1, Mounting Type:Through Hole, Type:Power MOSFET, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, TP0620N3-G pinout, TP0620N3-G datasheet PDF, TP0620N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP0620N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP0620N3-G


P-Channel Bulk 12 Ω @ 200mA, 10V ±20V 150pF @ 25V 200V TO-226-3, TO-92-3 (TO-226AA)

TP0620N3-G Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 150pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -175mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-200V. And this device has -200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.

TP0620N3-G Features


a continuous drain current (ID) of -175mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
a 200V drain to source voltage (Vdss)


TP0620N3-G Applications


There are a lot of Microchip Technology
TP0620N3-G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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