TP0620N3-G
- Mfr.Part #
- TP0620N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 175MA TO92-3
- Stock
- 9,404
- In Stock :
- 9,404
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Gate-Source Voltage (Max) :
- ±20(V)
- Base Product Number :
- TP0620
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 200mA, 10V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Channels :
- 1
- Mounting Style :
- Through Hole
- Terminal Form :
- Wire
- Weight :
- 219.992299mg
- Product Type :
- MOSFET
- Turn-Off Delay Time :
- 20 ns
- Operating Temp Range :
- -55C to 150C
- Fall Time (Typ) :
- 16 ns
- Power Dissipation-Max :
- 1W Ta
- Transistor Type :
- 1 P-Channel
- Manufacturer :
- Microchip
- Drain to Source Voltage (Vdss) :
- 200V
- Transistor Polarity :
- P-Channel
- Supplier Device Package :
- TO-92-3
- Rise Time :
- 15ns
- RoHS :
- Details
- FET Feature :
- --
- Drain to Source Breakdown Voltage :
- -200V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Type :
- TO-92
- FET Type :
- P-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 150pF @ 25V
- Continuous Drain Current :
- 0.175(A)
- Transistor Application :
- SWITCHING
- Configuration :
- Single
- Length :
- 5.21mm
- Operating Temperature Classification :
- Military
- Continuous Drain Current (ID) :
- -175mA
- Current - Continuous Drain (Id) @ 25°C :
- 175mA Tj
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Polarity :
- P
- Drain-Source On-Volt :
- 200(V)
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Bulk
- Number of Pins :
- 3
- Width :
- 4.19mm
- RoHS Status :
- ROHS3 Compliant
- Mounting :
- Through Hole
- Height :
- 5.33mm
- Factory Lead Time :
- 5 Weeks
- Product Category :
- MOSFET
- Brand :
- Microchip Technology
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 10 ns
- ECCN Code :
- EAR99
- Rad Hardened :
- No
- JESD-609 Code :
- e3
- Maximum Operating Temperature :
- + 150 C
- Package :
- Bag
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Resistance :
- 12Ohm
- Number of Elements :
- 1
- Power Dissipation :
- 1W
- Published :
- 2013
- Series :
- --
- Lead Free :
- Lead Free
- Minimum Operating Temperature :
- - 55 C
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Subcategory :
- MOSFETs
- Additional Feature :
- LOW THRESHOLD
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Power Dissipation (Max) :
- 1W (Ta)
- Type :
- Power MOSFET
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Channel Mode :
- Enhancement
- Datasheets
- TP0620N3-G
,TO-226_straightlead.jpg)
P-Channel Bulk 12 Ω @ 200mA, 10V ±20V 150pF @ 25V 200V TO-226-3, TO-92-3 (TO-226AA)
TP0620N3-G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 150pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -175mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-200V. And this device has -200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.
TP0620N3-G Features
a continuous drain current (ID) of -175mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
a 200V drain to source voltage (Vdss)
TP0620N3-G Applications
There are a lot of Microchip Technology
TP0620N3-G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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