TP0620N3-G

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Mfr.Part #
TP0620N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 200V 175MA TO92-3
Stock
9,404
In Stock :
9,404

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Transistor Element Material :
SILICON
Factory Lead Time :
5 Weeks
Packaging :
Bulk
Manufacturer :
Microchip
Operating Mode :
ENHANCEMENT MODE
Transistor Type :
1 P-Channel
Element Configuration :
Single
Channel Mode :
Enhancement
FET Feature :
--
Number of Pins :
3
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Current - Continuous Drain (Id) @ 25°C :
175mA Tj
Operating Temperature :
-55°C~150°C TJ
Configuration :
Single
Qualification Status :
Not Qualified
Continuous Drain Current :
0.175(A)
Fall Time (Typ) :
16 ns
Minimum Operating Temperature :
- 55 C
Power Dissipation :
1W
Drain-Source On-Volt :
200(V)
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 25V
Product Category :
MOSFET
Polarity :
P
Number of Channels :
1
Terminal Finish :
Matte Tin (Sn)
ECCN Code :
EAR99
Brand :
Microchip Technology
Rad Hardened :
No
Number of Terminations :
3
Mounting Type :
Through Hole
Subcategory :
MOSFETs
Terminal Position :
BOTTOM
Length :
5.21mm
Mounting :
Through Hole
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Turn On Delay Time :
10 ns
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Weight :
219.992299mg
Number of Elements :
1
Width :
4.19mm
Base Product Number :
TP0620
Drain to Source Voltage (Vdss) :
200V
Product Status :
Active
JESD-609 Code :
e3
Product Type :
MOSFET
Gate-Source Voltage (Max) :
±20(V)
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
-200V
Power Dissipation-Max :
1W Ta
Published :
2013
Transistor Polarity :
P-Channel
Series :
--
Rise Time :
15ns
Power Dissipation (Max) :
1W (Ta)
Pin Count :
3
Lead Free :
Lead Free
RoHS :
Details
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Package :
Bag
Height :
5.33mm
Vgs (Max) :
±20V
Package Type :
TO-92
Maximum Operating Temperature :
+ 150 C
FET Type :
P-Channel
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Mounting Style :
Through Hole
Terminal Form :
Wire
Turn-Off Delay Time :
20 ns
Type :
Power MOSFET
Operating Temperature Classification :
Military
Resistance :
12Ohm
Peak Reflow Temperature (Cel) :
Not Applicable
Additional Feature :
LOW THRESHOLD
Continuous Drain Current (ID) :
-175mA
Gate to Source Voltage (Vgs) :
20V
Operating Temp Range :
-55C to 150C
Supplier Device Package :
TO-92-3
Datasheets
TP0620N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP0620N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Type:Power MOSFET, TP0620N3-G pinout, TP0620N3-G datasheet PDF, TP0620N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP0620N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP0620N3-G


P-Channel Bulk 12 Ω @ 200mA, 10V ±20V 150pF @ 25V 200V TO-226-3, TO-92-3 (TO-226AA)

TP0620N3-G Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 150pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -175mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-200V. And this device has -200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.

TP0620N3-G Features


a continuous drain current (ID) of -175mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
a 200V drain to source voltage (Vdss)


TP0620N3-G Applications


There are a lot of Microchip Technology
TP0620N3-G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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