TP0620N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Vgs (Max) :

±20V

Rad Hardened :

No

Subcategory :

MOSFETs

Power Dissipation-Max :

1W Ta

Turn On Delay Time :

10 ns

Operating Temp Range :

-55C to 150C

Weight :

219.992299mg

Power Dissipation :

1W

Series :

--

Mount :

Through Hole

Rise Time :

15ns

Mounting Style :

Through Hole

Maximum Operating Temperature :

+ 150 C

Terminal Position :

BOTTOM

Continuous Drain Current :

0.175(A)

Transistor Polarity :

P-Channel

Fall Time (Typ) :

16 ns

Base Product Number :

TP0620

Published :

2013

Type :

Power MOSFET

Brand :

Microchip Technology

Product Type :

MOSFET

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Polarity :

P

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Lead Free :

Lead Free

Terminal Form :

Wire

Manufacturer :

Microchip

Transistor Type :

1 P-Channel

Configuration :

Single

Operating Temperature Classification :

Military

Channel Mode :

Enhancement

Number of Terminations :

3

Product Status :

Active

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

Height :

5.33mm

Current - Continuous Drain (Id) @ 25°C :

175mA Tj

Additional Feature :

LOW THRESHOLD

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Minimum Operating Temperature :

- 55 C

Pin Count :

3

Drain-Source On-Volt :

200(V)

Continuous Drain Current (ID) :

-175mA

RoHS :

Details

Power Dissipation (Max) :

1W (Ta)

Operating Mode :

ENHANCEMENT MODE

Width :

4.19mm

Package Type :

TO-92

Transistor Application :

SWITCHING

Turn-Off Delay Time :

20 ns

Number of Channels :

1

Length :

5.21mm

Resistance :

12Ohm

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Factory Lead Time :

5 Weeks

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Element Configuration :

Single

Supplier Device Package :

TO-92-3

Drain to Source Breakdown Voltage :

-200V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

Not Applicable

Product Category :

MOSFET

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

FET Feature :

--

RoHS Status :

ROHS3 Compliant

Package :

Bag

Rds On (Max) @ Id, Vgs :

12 Ω @ 200mA, 10V

Mounting :

Through Hole

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Gate-Source Voltage (Max) :

±20(V)

Mounting Type :

Through Hole

JESD-609 Code :

e3