TP0620N3-G

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Mfr.Part #
TP0620N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 200V 175MA TO92-3
Stock
9,404
In Stock :
9,404

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Qualification Status :
Not Qualified
Gate-Source Voltage (Max) :
±20(V)
Base Product Number :
TP0620
Rds On (Max) @ Id, Vgs :
12 Ω @ 200mA, 10V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Number of Channels :
1
Mounting Style :
Through Hole
Terminal Form :
Wire
Weight :
219.992299mg
Product Type :
MOSFET
Turn-Off Delay Time :
20 ns
Operating Temp Range :
-55C to 150C
Fall Time (Typ) :
16 ns
Power Dissipation-Max :
1W Ta
Transistor Type :
1 P-Channel
Manufacturer :
Microchip
Drain to Source Voltage (Vdss) :
200V
Transistor Polarity :
P-Channel
Supplier Device Package :
TO-92-3
Rise Time :
15ns
RoHS :
Details
FET Feature :
--
Drain to Source Breakdown Voltage :
-200V
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package Type :
TO-92
FET Type :
P-Channel
Terminal Finish :
Matte Tin (Sn)
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 25V
Continuous Drain Current :
0.175(A)
Transistor Application :
SWITCHING
Configuration :
Single
Length :
5.21mm
Operating Temperature Classification :
Military
Continuous Drain Current (ID) :
-175mA
Current - Continuous Drain (Id) @ 25°C :
175mA Tj
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Polarity :
P
Drain-Source On-Volt :
200(V)
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Packaging :
Bulk
Number of Pins :
3
Width :
4.19mm
RoHS Status :
ROHS3 Compliant
Mounting :
Through Hole
Height :
5.33mm
Factory Lead Time :
5 Weeks
Product Category :
MOSFET
Brand :
Microchip Technology
Product Status :
Active
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Turn On Delay Time :
10 ns
ECCN Code :
EAR99
Rad Hardened :
No
JESD-609 Code :
e3
Maximum Operating Temperature :
+ 150 C
Package :
Bag
Number of Terminations :
3
Vgs (Max) :
±20V
Element Configuration :
Single
Resistance :
12Ohm
Number of Elements :
1
Power Dissipation :
1W
Published :
2013
Series :
--
Lead Free :
Lead Free
Minimum Operating Temperature :
- 55 C
Terminal Position :
BOTTOM
Peak Reflow Temperature (Cel) :
Not Applicable
Subcategory :
MOSFETs
Additional Feature :
LOW THRESHOLD
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Power Dissipation (Max) :
1W (Ta)
Type :
Power MOSFET
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Mount :
Through Hole
Mounting Type :
Through Hole
Channel Mode :
Enhancement
Datasheets
TP0620N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP0620N3-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Type:Power MOSFET, Mounting Type:Through Hole, TP0620N3-G pinout, TP0620N3-G datasheet PDF, TP0620N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP0620N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP0620N3-G


P-Channel Bulk 12 Ω @ 200mA, 10V ±20V 150pF @ 25V 200V TO-226-3, TO-92-3 (TO-226AA)

TP0620N3-G Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 150pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -175mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-200V. And this device has -200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.

TP0620N3-G Features


a continuous drain current (ID) of -175mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
a 200V drain to source voltage (Vdss)


TP0620N3-G Applications


There are a lot of Microchip Technology
TP0620N3-G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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