TP0620N3-G
- Mfr.Part #
- TP0620N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET P-CH 200V 175MA TO92-3
- Stock
- 9,404
- In Stock :
- 9,404
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Package Type :
- TO-92
- Number of Pins :
- 3
- Operating Temp Range :
- -55C to 150C
- Factory Lead Time :
- 5 Weeks
- Rise Time :
- 15ns
- Transistor Type :
- 1 P-Channel
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Bag
- Subcategory :
- MOSFETs
- Product Type :
- MOSFET
- Published :
- 2013
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Polarity :
- P
- Maximum Operating Temperature :
- + 150 C
- Fall Time (Typ) :
- 16 ns
- Element Configuration :
- Single
- Operating Temperature Classification :
- Military
- Continuous Drain Current (ID) :
- -175mA
- Transistor Polarity :
- P-Channel
- Turn On Delay Time :
- 10 ns
- RoHS :
- Details
- Continuous Drain Current :
- 0.175(A)
- Packaging :
- Bulk
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Rad Hardened :
- No
- Drain to Source Voltage (Vdss) :
- 200V
- Vgs (Max) :
- ±20V
- Resistance :
- 12Ohm
- Length :
- 5.21mm
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 20 ns
- Current - Continuous Drain (Id) @ 25°C :
- 175mA Tj
- Series :
- --
- Height :
- 5.33mm
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Supplier Device Package :
- TO-92-3
- Terminal Form :
- Wire
- Power Dissipation-Max :
- 1W Ta
- Weight :
- 219.992299mg
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Minimum Operating Temperature :
- - 55 C
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Active
- FET Feature :
- --
- Power Dissipation :
- 1W
- Type :
- Power MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 150pF @ 25V
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Mounting :
- Through Hole
- Number of Terminations :
- 3
- Width :
- 4.19mm
- Drain to Source Breakdown Voltage :
- -200V
- Product Category :
- MOSFET
- Terminal Position :
- BOTTOM
- Gate-Source Voltage (Max) :
- ±20(V)
- Pin Count :
- 3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- Through Hole
- Power Dissipation (Max) :
- 1W (Ta)
- Brand :
- Microchip Technology
- Drain-Source On-Volt :
- 200(V)
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Additional Feature :
- LOW THRESHOLD
- Channel Mode :
- Enhancement
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 12 Ω @ 200mA, 10V
- Base Product Number :
- TP0620
- Manufacturer :
- Microchip
- Datasheets
- TP0620N3-G
,TO-226_straightlead.jpg)
P-Channel Bulk 12 Ω @ 200mA, 10V ±20V 150pF @ 25V 200V TO-226-3, TO-92-3 (TO-226AA)
TP0620N3-G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 150pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -175mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-200V. And this device has -200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.
TP0620N3-G Features
a continuous drain current (ID) of -175mA
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 20 ns
a 200V drain to source voltage (Vdss)
TP0620N3-G Applications
There are a lot of Microchip Technology
TP0620N3-G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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