TP0610KL-TR1-E3
- Mfr.Part #
- TP0610KL-TR1-E3
- Manufacturer
- Vishay
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 270MA TO226AA
- Stock
- 45,000
- In Stock :
- 45,000
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Rise Time :
- 15.5ns
- Length :
- 4.7mm
- Fall Time (Typ) :
- 15.5 ns
- Min Operating Temperature :
- -55°C
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- -270mA
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 6 Ω
- Turn On Delay Time :
- 2.4 ns
- Turn-Off Delay Time :
- 21 ns
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Height :
- 4.7mm
- Weight :
- 453.59237mg
- Mount :
- Through Hole
- Max Operating Temperature :
- 150°C
- Gate Charge (Qg) (Max) @ Vgs :
- 3nC @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 10Ohm
- Series :
- TrenchFET®
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power Dissipation :
- 800mW
- Drain to Source Breakdown Voltage :
- -60V
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 800mW Ta
- Drain to Source Resistance :
- 6Ohm
- Supplier Device Package :
- TO-226AA
- Published :
- 2009
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 500mA, 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Element Configuration :
- Single
- Width :
- 3.68mm
- Current - Continuous Drain (Id) @ 25°C :
- 270mA Ta
- Datasheets
- TP0610KL-TR1-E3
,TO-226_straightlead.jpg)
P-Channel Tape & Reel (TR) 6Ohm @ 500mA, 10V ±20V 3nC @ 15V 60V TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TP0610KL-TR1-E3 Overview
In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -60V.As a result of its turn-off delay time, which is 21 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 6Ohm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 2.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
TP0610KL-TR1-E3 Features
a continuous drain current (ID) of -270mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 6Ohm
a 60V drain to source voltage (Vdss)
TP0610KL-TR1-E3 Applications
There are a lot of Vishay Siliconix
TP0610KL-TR1-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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