TP0604N3-G
- Mfr.Part #
- TP0604N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 430MA TO92-3
- Stock
- 4,357
- In Stock :
- 4,357
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- P-Channel
- Transistor Type :
- 1 P-Channel
- Continuous Drain Current Id :
- 430
- Base Product Number :
- TP0604
- Polarity :
- P
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Packaging :
- Bulk
- Mount :
- Through Hole
- Channel Mode :
- Enhancement
- Element Configuration :
- Single
- Package Type :
- TO-92
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Gate-Source Voltage (Max) :
- ±20(V)
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- TO-92-3
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Product Status :
- Active
- Drain to Source Breakdown Voltage :
- -40V
- Rise Time :
- 7ns
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.19mm
- Published :
- 2012
- Rad Hardened :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation (Max) :
- 740mW (Ta)
- JESD-609 Code :
- e3
- Minimum Operating Temperature :
- - 55 C
- RoHS Status :
- ROHS3 Compliant
- RoHS :
- Details
- Mounting :
- Through Hole
- Package :
- Bag
- FET Feature :
- -
- Number of Pins :
- 3
- Length :
- 5.21mm
- ECCN Code :
- EAR99
- Brand :
- Microchip Technology / Atmel
- Current - Continuous Drain (Id) @ 25°C :
- 430mA Tj
- Product Category :
- MOSFET
- Feedback Cap-Max (Crss) :
- 60 pF
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Operating Temperature Classification :
- Military
- Drain to Source Voltage (Vdss) :
- 40V
- Continuous Drain Current (ID) :
- 430mA
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Channel Type :
- P
- Power Dissipation :
- 1W
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Pin Count :
- 3
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 740mW Ta
- Turn On Delay Time :
- 5 ns
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 10 ns
- Product Type :
- MOSFET
- FET Type :
- P-Channel
- Maximum Operating Temperature :
- + 150 C
- Configuration :
- Single
- Height :
- 5.33mm
- Factory Lead Time :
- 7 Weeks
- Mounting Type :
- Through Hole
- Type :
- Power MOSFET
- Mounting Style :
- Through Hole
- Weight :
- 453.59237mg
- Fall Time (Typ) :
- 6 ns
- Number of Channels :
- 1
- Operating Temp Range :
- -55C to 150C
- Radiation Hardening :
- No
- Drain-Source On-Volt :
- 40(V)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 150pF @ 20V
- Manufacturer :
- Microchip
- Drain-source On Resistance-Max :
- 2Ohm
- Series :
- -
- Continuous Drain Current :
- 0.43(A)
- Terminal Position :
- BOTTOM
- Drain Current-Max (Abs) (ID) :
- 0.75A
- Datasheets
- TP0604N3-G
,TO-226_straightlead.jpg)
P-Channel Bulk 2 Ω @ 1A, 10V ±20V 150pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)
TP0604N3-G Overview
A device's maximal input capacitance is 150pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).
TP0604N3-G Features
a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 10 ns
a 40V drain to source voltage (Vdss)
TP0604N3-G Applications
There are a lot of Microchip Technology
TP0604N3-G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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