TP0604N3-G
- Mfr.Part #
- TP0604N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 430MA TO92-3
- Stock
- 4,357
- In Stock :
- 4,357
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- FET Type :
- P-Channel
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Mount :
- Through Hole
- Channel Type :
- P
- Factory Lead Time :
- 7 Weeks
- Power Dissipation-Max :
- 740mW Ta
- Operating Mode :
- ENHANCEMENT MODE
- FET Feature :
- -
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Number of Channels :
- 1
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Continuous Drain Current :
- 0.43(A)
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Type :
- 1 P-Channel
- Drain-source On Resistance-Max :
- 2Ohm
- Element Configuration :
- Single
- Rad Hardened :
- No
- Drain to Source Breakdown Voltage :
- -40V
- Drain Current-Max (Abs) (ID) :
- 0.75A
- Number of Elements :
- 1
- Series :
- -
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Base Product Number :
- TP0604
- Number of Pins :
- 3
- Continuous Drain Current Id :
- 430
- Width :
- 4.19mm
- Package :
- Bag
- Transistor Polarity :
- P-Channel
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Turn On Delay Time :
- 5 ns
- Fall Time (Typ) :
- 6 ns
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 740mW (Ta)
- Manufacturer :
- Microchip
- Channel Mode :
- Enhancement
- Operating Temp Range :
- -55C to 150C
- Rise Time :
- 7ns
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1W
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 430mA Tj
- Published :
- 2012
- Operating Temperature :
- -55°C~150°C TJ
- Gate-Source Voltage (Max) :
- ±20(V)
- Product Category :
- MOSFET
- Supplier Device Package :
- TO-92-3
- Radiation Hardening :
- No
- Product Status :
- Active
- Configuration :
- Single
- Operating Temperature Classification :
- Military
- Gate to Source Voltage (Vgs) :
- 20V
- Type :
- Power MOSFET
- ECCN Code :
- EAR99
- Continuous Drain Current (ID) :
- 430mA
- Terminal Position :
- BOTTOM
- Length :
- 5.21mm
- JESD-609 Code :
- e3
- Polarity :
- P
- Drain to Source Voltage (Vdss) :
- 40V
- Turn-Off Delay Time :
- 10 ns
- Feedback Cap-Max (Crss) :
- 60 pF
- Weight :
- 453.59237mg
- Height :
- 5.33mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 150pF @ 20V
- Mounting Style :
- Through Hole
- Transistor Element Material :
- SILICON
- Drain-Source On-Volt :
- 40(V)
- Brand :
- Microchip Technology / Atmel
- Package Type :
- TO-92
- Mounting :
- Through Hole
- RoHS :
- Details
- Product Type :
- MOSFET
- Datasheets
- TP0604N3-G
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P-Channel Bulk 2 Ω @ 1A, 10V ±20V 150pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)
TP0604N3-G Overview
A device's maximal input capacitance is 150pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).
TP0604N3-G Features
a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 10 ns
a 40V drain to source voltage (Vdss)
TP0604N3-G Applications
There are a lot of Microchip Technology
TP0604N3-G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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