TP0604N3-G

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Mfr.Part #
TP0604N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 40V 430MA TO92-3
Stock
4,357
In Stock :
4,357

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Weight :
453.59237mg
FET Type :
P-Channel
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Rad Hardened :
No
Product Category :
MOSFET
Number of Terminations :
3
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Transistor Polarity :
P-Channel
Drain to Source Voltage (Vdss) :
40V
Gate to Source Voltage (Vgs) :
20V
Continuous Drain Current (ID) :
430mA
Turn On Delay Time :
5 ns
JESD-609 Code :
e3
Packaging :
Bulk
Continuous Drain Current :
0.43(A)
Brand :
Microchip Technology / Atmel
Radiation Hardening :
No
Type :
Power MOSFET
Turn-Off Delay Time :
10 ns
Operating Temp Range :
-55C to 150C
Element Configuration :
Single
Factory Lead Time :
7 Weeks
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Configuration :
Single
Operating Temperature Classification :
Military
Width :
4.19mm
Power Dissipation :
1W
Number of Channels :
1
FET Feature :
-
Product Status :
Active
Drain-Source On-Volt :
40(V)
Transistor Type :
1 P-Channel
Number of Pins :
3
Pin Count :
3
Continuous Drain Current Id :
430
Power Dissipation-Max :
740mW Ta
Package :
Bag
Package Type :
TO-92
Maximum Operating Temperature :
+ 150 C
RoHS :
Details
Gate-Source Voltage (Max) :
±20(V)
Rise Time :
7ns
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Published :
2012
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
2Ohm
Fall Time (Typ) :
6 ns
Height :
5.33mm
Power Dissipation (Max) :
740mW (Ta)
Length :
5.21mm
Drain to Source Breakdown Voltage :
-40V
Manufacturer :
Microchip
Feedback Cap-Max (Crss) :
60 pF
Transistor Element Material :
SILICON
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Product Type :
MOSFET
Minimum Operating Temperature :
- 55 C
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 20V
Number of Elements :
1
Channel Type :
P
Channel Mode :
Enhancement
Mounting Style :
Through Hole
Mounting :
Through Hole
Series :
-
Base Product Number :
TP0604
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Polarity :
P
Current - Continuous Drain (Id) @ 25°C :
430mA Tj
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
Terminal Position :
BOTTOM
Drain Current-Max (Abs) (ID) :
0.75A
Terminal Finish :
Matte Tin (Sn)
Mount :
Through Hole
Supplier Device Package :
TO-92-3
Datasheets
TP0604N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP0604N3-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Type:Power MOSFET, Number of Channels:1, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-226-3, TO-92-3 (TO-226AA), TP0604N3-G pinout, TP0604N3-G datasheet PDF, TP0604N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP0604N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP0604N3-G


P-Channel Bulk 2 Ω @ 1A, 10V ±20V 150pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)

TP0604N3-G Overview


A device's maximal input capacitance is 150pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).

TP0604N3-G Features


a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 10 ns
a 40V drain to source voltage (Vdss)


TP0604N3-G Applications


There are a lot of Microchip Technology
TP0604N3-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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