TP0604N3-G

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Mfr.Part #
TP0604N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 40V 430MA TO92-3
Stock
4,357
In Stock :
4,357

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
10 ns
JESD-609 Code :
e3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity :
P
Pin Count :
3
Power Dissipation (Max) :
740mW (Ta)
Manufacturer :
Microchip
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 20V
Operating Temperature :
-55°C~150°C TJ
Radiation Hardening :
No
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Series :
-
Length :
5.21mm
Minimum Operating Temperature :
- 55 C
Product Status :
Active
Power Dissipation-Max :
740mW Ta
Drain to Source Voltage (Vdss) :
40V
Configuration :
Single
Drain Current-Max (Abs) (ID) :
0.75A
Drain to Source Breakdown Voltage :
-40V
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
5 ns
Drain-source On Resistance-Max :
2Ohm
Type :
Power MOSFET
RoHS Status :
ROHS3 Compliant
Transistor Type :
1 P-Channel
Operating Temp Range :
-55C to 150C
Current - Continuous Drain (Id) @ 25°C :
430mA Tj
Number of Pins :
3
Number of Terminations :
3
Base Product Number :
TP0604
Product Category :
MOSFET
Continuous Drain Current (ID) :
430mA
Transistor Element Material :
SILICON
Packaging :
Bulk
Channel Mode :
Enhancement
Terminal Position :
BOTTOM
Rad Hardened :
No
Mounting Type :
Through Hole
Mounting :
Through Hole
Maximum Operating Temperature :
+ 150 C
Operating Temperature Classification :
Military
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
Weight :
453.59237mg
Continuous Drain Current Id :
430
Vgs (Max) :
±20V
Supplier Device Package :
TO-92-3
Package Type :
TO-92
Fall Time (Typ) :
6 ns
Power Dissipation :
1W
Product Type :
MOSFET
Height :
5.33mm
FET Type :
P-Channel
Transistor Application :
SWITCHING
Width :
4.19mm
Gate to Source Voltage (Vgs) :
20V
Feedback Cap-Max (Crss) :
60 pF
RoHS :
Details
Transistor Polarity :
P-Channel
Element Configuration :
Single
Mounting Style :
Through Hole
FET Feature :
-
Continuous Drain Current :
0.43(A)
Terminal Finish :
Matte Tin (Sn)
Published :
2012
Drain-Source On-Volt :
40(V)
Package :
Bag
Rise Time :
7ns
Number of Channels :
1
Mount :
Through Hole
Gate-Source Voltage (Max) :
±20(V)
Brand :
Microchip Technology / Atmel
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Channel Type :
P
ECCN Code :
EAR99
Factory Lead Time :
7 Weeks
Datasheets
TP0604N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP0604N3-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, Number of Pins:3, Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Channels:1, TP0604N3-G pinout, TP0604N3-G datasheet PDF, TP0604N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP0604N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP0604N3-G


P-Channel Bulk 2 Ω @ 1A, 10V ±20V 150pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)

TP0604N3-G Overview


A device's maximal input capacitance is 150pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).

TP0604N3-G Features


a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 10 ns
a 40V drain to source voltage (Vdss)


TP0604N3-G Applications


There are a lot of Microchip Technology
TP0604N3-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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