TP0604N3-G

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Mfr.Part #
TP0604N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 40V 430MA TO92-3
Stock
4,357
In Stock :
4,357

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
6 ns
Operating Temp Range :
-55C to 150C
Package :
Bag
Manufacturer :
Microchip
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
TO-92-3
Number of Terminations :
3
Terminal Position :
BOTTOM
Number of Elements :
1
Product Category :
MOSFET
Transistor Type :
1 P-Channel
Number of Pins :
3
Element Configuration :
Single
Rise Time :
7ns
Power Dissipation (Max) :
740mW (Ta)
Product Type :
MOSFET
Drain Current-Max (Abs) (ID) :
0.75A
Channel Type :
P
Height :
5.33mm
Mount :
Through Hole
Width :
4.19mm
Drain to Source Breakdown Voltage :
-40V
Maximum Operating Temperature :
+ 150 C
Weight :
453.59237mg
Series :
-
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Gate-Source Voltage (Max) :
±20(V)
ECCN Code :
EAR99
Channel Mode :
Enhancement
Base Product Number :
TP0604
Turn On Delay Time :
5 ns
Turn-Off Delay Time :
10 ns
Power Dissipation-Max :
740mW Ta
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
40V
Drain-Source On-Volt :
40(V)
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
Brand :
Microchip Technology / Atmel
Rad Hardened :
No
Mounting Type :
Through Hole
Vgs (Max) :
±20V
Product Status :
Active
Continuous Drain Current Id :
430
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Configuration :
Single
JESD-609 Code :
e3
Mounting :
Through Hole
Number of Channels :
1
Transistor Application :
SWITCHING
Feedback Cap-Max (Crss) :
60 pF
Current - Continuous Drain (Id) @ 25°C :
430mA Tj
Continuous Drain Current (ID) :
430mA
Drain-source On Resistance-Max :
2Ohm
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Polarity :
P
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 20V
Pin Count :
3
Power Dissipation :
1W
Published :
2012
FET Type :
P-Channel
Operating Temperature Classification :
Military
Gate to Source Voltage (Vgs) :
20V
Type :
Power MOSFET
Factory Lead Time :
7 Weeks
Mounting Style :
Through Hole
Continuous Drain Current :
0.43(A)
Minimum Operating Temperature :
- 55 C
Terminal Finish :
Matte Tin (Sn)
Packaging :
Bulk
FET Feature :
-
RoHS :
Details
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Package Type :
TO-92
Length :
5.21mm
Transistor Polarity :
P-Channel
Datasheets
TP0604N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP0604N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Mounting Type:Through Hole, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, TP0604N3-G pinout, TP0604N3-G datasheet PDF, TP0604N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP0604N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP0604N3-G


P-Channel Bulk 2 Ω @ 1A, 10V ±20V 150pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)

TP0604N3-G Overview


A device's maximal input capacitance is 150pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).

TP0604N3-G Features


a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 10 ns
a 40V drain to source voltage (Vdss)


TP0604N3-G Applications


There are a lot of Microchip Technology
TP0604N3-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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