TP0604N3-G

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Mfr.Part #
TP0604N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 40V 430MA TO92-3
Stock
4,357
In Stock :
4,357

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Polarity :
P-Channel
Transistor Type :
1 P-Channel
Continuous Drain Current Id :
430
Base Product Number :
TP0604
Polarity :
P
Number of Elements :
1
Terminal Finish :
Matte Tin (Sn)
Packaging :
Bulk
Mount :
Through Hole
Channel Mode :
Enhancement
Element Configuration :
Single
Package Type :
TO-92
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Gate-Source Voltage (Max) :
±20(V)
Vgs (Max) :
±20V
Supplier Device Package :
TO-92-3
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Product Status :
Active
Drain to Source Breakdown Voltage :
-40V
Rise Time :
7ns
Operating Temperature :
-55°C~150°C TJ
Width :
4.19mm
Published :
2012
Rad Hardened :
No
Gate to Source Voltage (Vgs) :
20V
Power Dissipation (Max) :
740mW (Ta)
JESD-609 Code :
e3
Minimum Operating Temperature :
- 55 C
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Mounting :
Through Hole
Package :
Bag
FET Feature :
-
Number of Pins :
3
Length :
5.21mm
ECCN Code :
EAR99
Brand :
Microchip Technology / Atmel
Current - Continuous Drain (Id) @ 25°C :
430mA Tj
Product Category :
MOSFET
Feedback Cap-Max (Crss) :
60 pF
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
Operating Temperature Classification :
Military
Drain to Source Voltage (Vdss) :
40V
Continuous Drain Current (ID) :
430mA
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Channel Type :
P
Power Dissipation :
1W
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Pin Count :
3
Number of Terminations :
3
Power Dissipation-Max :
740mW Ta
Turn On Delay Time :
5 ns
Transistor Element Material :
SILICON
Turn-Off Delay Time :
10 ns
Product Type :
MOSFET
FET Type :
P-Channel
Maximum Operating Temperature :
+ 150 C
Configuration :
Single
Height :
5.33mm
Factory Lead Time :
7 Weeks
Mounting Type :
Through Hole
Type :
Power MOSFET
Mounting Style :
Through Hole
Weight :
453.59237mg
Fall Time (Typ) :
6 ns
Number of Channels :
1
Operating Temp Range :
-55C to 150C
Radiation Hardening :
No
Drain-Source On-Volt :
40(V)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 20V
Manufacturer :
Microchip
Drain-source On Resistance-Max :
2Ohm
Series :
-
Continuous Drain Current :
0.43(A)
Terminal Position :
BOTTOM
Drain Current-Max (Abs) (ID) :
0.75A
Datasheets
TP0604N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP0604N3-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Terminations:3, Mounting Type:Through Hole, Type:Power MOSFET, Number of Channels:1, TP0604N3-G pinout, TP0604N3-G datasheet PDF, TP0604N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP0604N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP0604N3-G


P-Channel Bulk 2 Ω @ 1A, 10V ±20V 150pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)

TP0604N3-G Overview


A device's maximal input capacitance is 150pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).

TP0604N3-G Features


a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 10 ns
a 40V drain to source voltage (Vdss)


TP0604N3-G Applications


There are a lot of Microchip Technology
TP0604N3-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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