TP0604N3-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2 Ω @ 1A, 10V

Rad Hardened :

No

Transistor Polarity :

P-Channel

Length :

5.21mm

Transistor Element Material :

SILICON

Power Dissipation (Max) :

740mW (Ta)

Package :

Bag

Terminal Position :

BOTTOM

Current - Continuous Drain (Id) @ 25°C :

430mA Tj

Transistor Application :

SWITCHING

Polarity :

P

Number of Elements :

1

Turn On Delay Time :

5 ns

FET Type :

P-Channel

RoHS Status :

ROHS3 Compliant

Operating Temperature Classification :

Military

Terminal Finish :

Matte Tin (Sn)

Width :

4.19mm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

Base Product Number :

TP0604

Type :

Power MOSFET

Supplier Device Package :

TO-92-3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Operating Temperature :

-55°C~150°C TJ

Channel Type :

P

Series :

-

Power Dissipation-Max :

740mW Ta

ECCN Code :

EAR99

Fall Time (Typ) :

6 ns

Brand :

Microchip Technology / Atmel

Configuration :

Single

Height :

5.33mm

Feedback Cap-Max (Crss) :

60 pF

Rise Time :

7ns

Continuous Drain Current :

0.43(A)

Continuous Drain Current (ID) :

430mA

Number of Terminations :

3

Minimum Operating Temperature :

- 55 C

Factory Lead Time :

7 Weeks

Weight :

453.59237mg

Operating Temp Range :

-55C to 150C

Mounting Style :

Through Hole

Drain-Source On-Volt :

40(V)

Packaging :

Bulk

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

40V

Drain-source On Resistance-Max :

2Ohm

RoHS :

Details

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2.4V @ 1mA

Package Type :

TO-92

Transistor Type :

1 P-Channel

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Manufacturer :

Microchip

Number of Pins :

3

Continuous Drain Current Id :

430

Drain to Source Breakdown Voltage :

-40V

FET Feature :

-

Published :

2012

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

0.75A

Mounting :

Through Hole

Gate-Source Voltage (Max) :

±20(V)

Channel Mode :

Enhancement

Mount :

Through Hole

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 20V

Radiation Hardening :

No

Power Dissipation :

1W

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

10 ns

Maximum Operating Temperature :

+ 150 C