TP0604N3-G
- Mfr.Part #
- TP0604N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 430MA TO92-3
- Stock
- 4,357
- In Stock :
- 4,357
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Mounting :
- Through Hole
- Transistor Application :
- SWITCHING
- Rise Time :
- 7ns
- Rad Hardened :
- No
- Number of Elements :
- 1
- Fall Time (Typ) :
- 6 ns
- Gate-Source Voltage (Max) :
- ±20(V)
- Type :
- Power MOSFET
- Channel Mode :
- Enhancement
- Brand :
- Microchip Technology / Atmel
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-92-3
- Base Product Number :
- TP0604
- Package :
- Bag
- Package Type :
- TO-92
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current Id :
- 430
- Feedback Cap-Max (Crss) :
- 60 pF
- Transistor Type :
- 1 P-Channel
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Details
- Continuous Drain Current :
- 0.43(A)
- Drain-source On Resistance-Max :
- 2Ohm
- Polarity :
- P
- Drain to Source Breakdown Voltage :
- -40V
- Operating Temperature Classification :
- Military
- Operating Temp Range :
- -55C to 150C
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Published :
- 2012
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 5 ns
- Mount :
- Through Hole
- Manufacturer :
- Microchip
- Series :
- -
- Turn-Off Delay Time :
- 10 ns
- Width :
- 4.19mm
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Current - Continuous Drain (Id) @ 25°C :
- 430mA Tj
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Height :
- 5.33mm
- Product Category :
- MOSFET
- Mounting Style :
- Through Hole
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- Single
- Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Drain to Source Voltage (Vdss) :
- 40V
- Channel Type :
- P
- Power Dissipation-Max :
- 740mW Ta
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging :
- Bulk
- Product Type :
- MOSFET
- Pin Count :
- 3
- Drain-Source On-Volt :
- 40(V)
- Weight :
- 453.59237mg
- Terminal Finish :
- Matte Tin (Sn)
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 0.75A
- FET Type :
- P-Channel
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- FET Feature :
- -
- Length :
- 5.21mm
- Continuous Drain Current (ID) :
- 430mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 150pF @ 20V
- Product Status :
- Active
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation (Max) :
- 740mW (Ta)
- Number of Pins :
- 3
- Transistor Polarity :
- P-Channel
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 7 Weeks
- Datasheets
- TP0604N3-G
,TO-226_straightlead.jpg)
P-Channel Bulk 2 Ω @ 1A, 10V ±20V 150pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)
TP0604N3-G Overview
A device's maximal input capacitance is 150pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).
TP0604N3-G Features
a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 10 ns
a 40V drain to source voltage (Vdss)
TP0604N3-G Applications
There are a lot of Microchip Technology
TP0604N3-G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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