TP0604N3-G

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Mfr.Part #
TP0604N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET P-CH 40V 430MA TO92-3
Stock
4,357
In Stock :
4,357

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2012
Manufacturer :
Microchip
Length :
5.21mm
Gate-Source Voltage (Max) :
±20(V)
Transistor Polarity :
P-Channel
Configuration :
Single
Fall Time (Typ) :
6 ns
Drain-Source On-Volt :
40(V)
Pin Count :
3
Vgs (Max) :
±20V
Factory Lead Time :
7 Weeks
Turn-Off Delay Time :
10 ns
Operating Temperature :
-55°C~150°C TJ
Number of Channels :
1
Vgs(th) (Max) @ Id :
2.4V @ 1mA
Power Dissipation (Max) :
740mW (Ta)
Type :
Power MOSFET
Continuous Drain Current Id :
430
Turn On Delay Time :
5 ns
Base Product Number :
TP0604
Series :
-
Mounting Style :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Radiation Hardening :
No
Power Dissipation :
1W
Rad Hardened :
No
Supplier Device Package :
TO-92-3
Number of Terminations :
3
Operating Temperature Classification :
Military
FET Feature :
-
Channel Mode :
Enhancement
Transistor Element Material :
SILICON
Additional Feature :
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
RoHS :
Details
Channel Type :
P
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Terminal Position :
BOTTOM
Drain to Source Breakdown Voltage :
-40V
Product Status :
Active
Height :
5.33mm
Minimum Operating Temperature :
- 55 C
Mounting :
Through Hole
Drain Current-Max (Abs) (ID) :
0.75A
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
2 Ω @ 1A, 10V
FET Type :
P-Channel
Rise Time :
7ns
Maximum Operating Temperature :
+ 150 C
Operating Temp Range :
-55C to 150C
Feedback Cap-Max (Crss) :
60 pF
Current - Continuous Drain (Id) @ 25°C :
430mA Tj
Weight :
453.59237mg
Element Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Width :
4.19mm
Transistor Type :
1 P-Channel
Transistor Application :
SWITCHING
Power Dissipation-Max :
740mW Ta
Package :
Bag
Continuous Drain Current :
0.43(A)
Operating Mode :
ENHANCEMENT MODE
Brand :
Microchip Technology / Atmel
Drain-source On Resistance-Max :
2Ohm
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 20V
ECCN Code :
EAR99
Product Category :
MOSFET
Package Type :
TO-92
Drain to Source Voltage (Vdss) :
40V
Number of Elements :
1
Continuous Drain Current (ID) :
430mA
JESD-609 Code :
e3
Mount :
Through Hole
Packaging :
Bulk
Product Type :
MOSFET
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Polarity :
P
Mounting Type :
Through Hole
Datasheets
TP0604N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TP0604N3-G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Type:Power MOSFET, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Pins:3, Mounting Type:Through Hole, TP0604N3-G pinout, TP0604N3-G datasheet PDF, TP0604N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TP0604N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TP0604N3-G


P-Channel Bulk 2 Ω @ 1A, 10V ±20V 150pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)

TP0604N3-G Overview


A device's maximal input capacitance is 150pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).

TP0604N3-G Features


a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 10 ns
a 40V drain to source voltage (Vdss)


TP0604N3-G Applications


There are a lot of Microchip Technology
TP0604N3-G applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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