TP0604N3-G
- Mfr.Part #
- TP0604N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 430MA TO92-3
- Stock
- 4,357
- In Stock :
- 4,357
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 10 ns
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- P
- Pin Count :
- 3
- Power Dissipation (Max) :
- 740mW (Ta)
- Manufacturer :
- Microchip
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 150pF @ 20V
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Series :
- -
- Length :
- 5.21mm
- Minimum Operating Temperature :
- - 55 C
- Product Status :
- Active
- Power Dissipation-Max :
- 740mW Ta
- Drain to Source Voltage (Vdss) :
- 40V
- Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 0.75A
- Drain to Source Breakdown Voltage :
- -40V
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 5 ns
- Drain-source On Resistance-Max :
- 2Ohm
- Type :
- Power MOSFET
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- 1 P-Channel
- Operating Temp Range :
- -55C to 150C
- Current - Continuous Drain (Id) @ 25°C :
- 430mA Tj
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Base Product Number :
- TP0604
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 430mA
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Channel Mode :
- Enhancement
- Terminal Position :
- BOTTOM
- Rad Hardened :
- No
- Mounting Type :
- Through Hole
- Mounting :
- Through Hole
- Maximum Operating Temperature :
- + 150 C
- Operating Temperature Classification :
- Military
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Weight :
- 453.59237mg
- Continuous Drain Current Id :
- 430
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- TO-92-3
- Package Type :
- TO-92
- Fall Time (Typ) :
- 6 ns
- Power Dissipation :
- 1W
- Product Type :
- MOSFET
- Height :
- 5.33mm
- FET Type :
- P-Channel
- Transistor Application :
- SWITCHING
- Width :
- 4.19mm
- Gate to Source Voltage (Vgs) :
- 20V
- Feedback Cap-Max (Crss) :
- 60 pF
- RoHS :
- Details
- Transistor Polarity :
- P-Channel
- Element Configuration :
- Single
- Mounting Style :
- Through Hole
- FET Feature :
- -
- Continuous Drain Current :
- 0.43(A)
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2012
- Drain-Source On-Volt :
- 40(V)
- Package :
- Bag
- Rise Time :
- 7ns
- Number of Channels :
- 1
- Mount :
- Through Hole
- Gate-Source Voltage (Max) :
- ±20(V)
- Brand :
- Microchip Technology / Atmel
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Channel Type :
- P
- ECCN Code :
- EAR99
- Factory Lead Time :
- 7 Weeks
- Datasheets
- TP0604N3-G
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P-Channel Bulk 2 Ω @ 1A, 10V ±20V 150pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)
TP0604N3-G Overview
A device's maximal input capacitance is 150pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).
TP0604N3-G Features
a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 10 ns
a 40V drain to source voltage (Vdss)
TP0604N3-G Applications
There are a lot of Microchip Technology
TP0604N3-G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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