TP0604N3-G
- Mfr.Part #
- TP0604N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 430MA TO92-3
- Stock
- 4,357
- In Stock :
- 4,357
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 453.59237mg
- FET Type :
- P-Channel
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Rad Hardened :
- No
- Product Category :
- MOSFET
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transistor Polarity :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 40V
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 430mA
- Turn On Delay Time :
- 5 ns
- JESD-609 Code :
- e3
- Packaging :
- Bulk
- Continuous Drain Current :
- 0.43(A)
- Brand :
- Microchip Technology / Atmel
- Radiation Hardening :
- No
- Type :
- Power MOSFET
- Turn-Off Delay Time :
- 10 ns
- Operating Temp Range :
- -55C to 150C
- Element Configuration :
- Single
- Factory Lead Time :
- 7 Weeks
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Configuration :
- Single
- Operating Temperature Classification :
- Military
- Width :
- 4.19mm
- Power Dissipation :
- 1W
- Number of Channels :
- 1
- FET Feature :
- -
- Product Status :
- Active
- Drain-Source On-Volt :
- 40(V)
- Transistor Type :
- 1 P-Channel
- Number of Pins :
- 3
- Pin Count :
- 3
- Continuous Drain Current Id :
- 430
- Power Dissipation-Max :
- 740mW Ta
- Package :
- Bag
- Package Type :
- TO-92
- Maximum Operating Temperature :
- + 150 C
- RoHS :
- Details
- Gate-Source Voltage (Max) :
- ±20(V)
- Rise Time :
- 7ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Published :
- 2012
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 2Ohm
- Fall Time (Typ) :
- 6 ns
- Height :
- 5.33mm
- Power Dissipation (Max) :
- 740mW (Ta)
- Length :
- 5.21mm
- Drain to Source Breakdown Voltage :
- -40V
- Manufacturer :
- Microchip
- Feedback Cap-Max (Crss) :
- 60 pF
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Product Type :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- Input Capacitance (Ciss) (Max) @ Vds :
- 150pF @ 20V
- Number of Elements :
- 1
- Channel Type :
- P
- Channel Mode :
- Enhancement
- Mounting Style :
- Through Hole
- Mounting :
- Through Hole
- Series :
- -
- Base Product Number :
- TP0604
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Polarity :
- P
- Current - Continuous Drain (Id) @ 25°C :
- 430mA Tj
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Terminal Position :
- BOTTOM
- Drain Current-Max (Abs) (ID) :
- 0.75A
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Through Hole
- Supplier Device Package :
- TO-92-3
- Datasheets
- TP0604N3-G
,TO-226_straightlead.jpg)
P-Channel Bulk 2 Ω @ 1A, 10V ±20V 150pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)
TP0604N3-G Overview
A device's maximal input capacitance is 150pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).
TP0604N3-G Features
a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 10 ns
a 40V drain to source voltage (Vdss)
TP0604N3-G Applications
There are a lot of Microchip Technology
TP0604N3-G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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