TP0604N3-G
- Mfr.Part #
- TP0604N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 430MA TO92-3
- Stock
- 4,357
- In Stock :
- 4,357
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Number of Channels :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1A, 10V
- Rad Hardened :
- No
- Transistor Polarity :
- P-Channel
- Length :
- 5.21mm
- Transistor Element Material :
- SILICON
- Power Dissipation (Max) :
- 740mW (Ta)
- Package :
- Bag
- Terminal Position :
- BOTTOM
- Current - Continuous Drain (Id) @ 25°C :
- 430mA Tj
- Transistor Application :
- SWITCHING
- Polarity :
- P
- Number of Elements :
- 1
- Turn On Delay Time :
- 5 ns
- FET Type :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature Classification :
- Military
- Terminal Finish :
- Matte Tin (Sn)
- Width :
- 4.19mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Additional Feature :
- LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
- Base Product Number :
- TP0604
- Type :
- Power MOSFET
- Supplier Device Package :
- TO-92-3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature :
- -55°C~150°C TJ
- Channel Type :
- P
- Series :
- -
- Power Dissipation-Max :
- 740mW Ta
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 6 ns
- Brand :
- Microchip Technology / Atmel
- Configuration :
- Single
- Height :
- 5.33mm
- Feedback Cap-Max (Crss) :
- 60 pF
- Rise Time :
- 7ns
- Continuous Drain Current :
- 0.43(A)
- Continuous Drain Current (ID) :
- 430mA
- Number of Terminations :
- 3
- Minimum Operating Temperature :
- - 55 C
- Factory Lead Time :
- 7 Weeks
- Weight :
- 453.59237mg
- Operating Temp Range :
- -55C to 150C
- Mounting Style :
- Through Hole
- Drain-Source On-Volt :
- 40(V)
- Packaging :
- Bulk
- Product Category :
- MOSFET
- Drain to Source Voltage (Vdss) :
- 40V
- Drain-source On Resistance-Max :
- 2Ohm
- RoHS :
- Details
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2.4V @ 1mA
- Package Type :
- TO-92
- Transistor Type :
- 1 P-Channel
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer :
- Microchip
- Number of Pins :
- 3
- Continuous Drain Current Id :
- 430
- Drain to Source Breakdown Voltage :
- -40V
- FET Feature :
- -
- Published :
- 2012
- Mounting Type :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 0.75A
- Mounting :
- Through Hole
- Gate-Source Voltage (Max) :
- ±20(V)
- Channel Mode :
- Enhancement
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 150pF @ 20V
- Radiation Hardening :
- No
- Power Dissipation :
- 1W
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 10 ns
- Maximum Operating Temperature :
- + 150 C
- Datasheets
- TP0604N3-G
,TO-226_straightlead.jpg)
P-Channel Bulk 2 Ω @ 1A, 10V ±20V 150pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)
TP0604N3-G Overview
A device's maximal input capacitance is 150pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 430mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 10 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).
TP0604N3-G Features
a continuous drain current (ID) of 430mA
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 10 ns
a 40V drain to source voltage (Vdss)
TP0604N3-G Applications
There are a lot of Microchip Technology
TP0604N3-G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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