TP0610K-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-60V

Continuous Drain Current (ID) :

-185mA

RoHS Status :

ROHS3 Compliant

FET Type :

P-Channel

Power Dissipation :

350mW

Number of Pins :

3

Length :

3.04mm

Published :

2016

Number of Elements :

1

Turn-Off Delay Time :

35 ns

Vgs (Max) :

±20V

Supplier Device Package :

SOT-23-3 (TO-236)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Turn On Delay Time :

20 ns

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

23pF @ 25V

Min Operating Temperature :

-55°C

Current - Continuous Drain (Id) @ 25°C :

185mA Ta

Number of Channels :

1

Series :

TrenchFET®

Max Operating Temperature :

150°C

Height :

1.02mm

Drain to Source Voltage (Vdss) :

60V

Radiation Hardening :

No

Rds On Max :

190 mΩ

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Weight :

1.437803g

REACH SVHC :

Unknown

Input Capacitance :

155pF

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

10Ohm

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

6Ohm @ 500mA, 10V

Nominal Vgs :

-1 V

Threshold Voltage :

-2V

Element Configuration :

Single

Power Dissipation-Max :

350mW Ta

Operating Temperature :

-55°C~150°C TJ

Width :

1.4mm

Gate Charge (Qg) (Max) @ Vgs :

1.7nC @ 15V