TP0610K-T1-GE3
- Mfr.Part #
- TP0610K-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 185MA SOT23-3
- Stock
- 80,387
- In Stock :
- 80,387
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 1.7nC @ 15V
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 500mA, 10V
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- -2V
- Series :
- TrenchFET®
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 35 ns
- FET Type :
- P-Channel
- Supplier Device Package :
- SOT-23-3 (TO-236)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2016
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Weight :
- 1.437803g
- Number of Channels :
- 1
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 60V
- REACH SVHC :
- Unknown
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- -185mA
- Lead Free :
- Lead Free
- Input Capacitance :
- 155pF
- Power Dissipation :
- 350mW
- Current - Continuous Drain (Id) @ 25°C :
- 185mA Ta
- Length :
- 3.04mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 23pF @ 25V
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- -60V
- Power Dissipation-Max :
- 350mW Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Width :
- 1.4mm
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Resistance :
- 10Ohm
- Vgs (Max) :
- ±20V
- Height :
- 1.02mm
- Mounting Type :
- Surface Mount
- Nominal Vgs :
- -1 V
- Rds On Max :
- 190 mΩ
- Min Operating Temperature :
- -55°C
- Turn On Delay Time :
- 20 ns
- Datasheets
- TP0610K-T1-GE3

P-Channel Tape & Reel (TR) 6Ohm @ 500mA, 10V ±20V 23pF @ 25V 1.7nC @ 15V 60V TO-236-3, SC-59, SOT-23-3
TP0610K-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 23pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -185mA amps.In this device, the drain-source breakdown voltage is -60V and VGS=-60V, so the drain-source breakdown voltage is -60V in this case.It is [35 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 10Ohm.A turn-on delay time of 20 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -2V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
TP0610K-T1-GE3 Features
a continuous drain current (ID) of -185mA
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 10Ohm
a threshold voltage of -2V
a 60V drain to source voltage (Vdss)
TP0610K-T1-GE3 Applications
There are a lot of Vishay Siliconix
TP0610K-T1-GE3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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