TN0606N3-G

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Mfr.Part #
TN0606N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 60V 500MA TO92-3
Stock
1
In Stock :
1

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Minimum Operating Temperature :
- 55 C
Element Configuration :
Single
Drain Current-Max (Abs) (ID) :
0.5A
Number of Terminations :
3
Weight :
453.59237mg
Drain-source On Resistance-Max :
2Ohm
Rise Time :
14ns
Vgs(th) (Max) @ Id :
2V @ 1mA
Maximum Operating Temperature :
+ 150 C
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
500mA
Configuration :
Single
Power Dissipation (Max) :
1W (Tc)
RoHS :
Details
Terminal Finish :
Matte Tin (Sn) - annealed
Product Type :
MOSFET
Number of Elements :
1
ECCN Code :
EAR99
Power Dissipation :
1W
Published :
2013
Package :
Bag
Transistor Polarity :
N-Channel
Supplier Device Package :
TO-92-3
Drain to Source Voltage (Vdss) :
60V
Drive Voltage (Max Rds On,Min Rds On) :
3V 10V
Additional Feature :
LOW THRESHOLD
Fall Time (Typ) :
16 ns
Turn-Off Delay Time :
16 ns
Width :
4.19mm
Brand :
Microchip Technology / Atmel
Mount :
Through Hole
Channel Type :
N
Drain to Source Breakdown Voltage :
60V
Number of Pins :
3
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Power Dissipation-Max :
1W Tc
Turn On Delay Time :
6 ns
Gate to Source Voltage (Vgs) :
20V
Type :
FET
Transistor Type :
1 N-Channel
Terminal Position :
BOTTOM
JESD-609 Code :
e3
Channel Mode :
Enhancement
RoHS Status :
ROHS3 Compliant
Continuous Drain Current Id :
500
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Bulk
Product Category :
MOSFET
Rds On (Max) @ Id, Vgs :
1.5 Ω @ 750mA, 10V
Operating Temperature :
-55°C~150°C TJ
Height :
5.33mm
FET Type :
N-Channel
Base Product Number :
TN0606
Product Status :
Active
Series :
--
Factory Lead Time :
20 Weeks
Number of Channels :
1
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Operating Mode :
ENHANCEMENT MODE
Radiation Hardening :
No
Transistor Application :
SWITCHING
FET Feature :
--
Mounting Style :
Through Hole
Manufacturer :
Microchip
Length :
5.21mm
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 25V
Datasheets
TN0606N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN0606N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Type:FET, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Package / Case:TO-226-3, TO-92-3 (TO-226AA), TN0606N3-G pinout, TN0606N3-G datasheet PDF, TN0606N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN0606N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN0606N3-G


N-Channel Bulk 1.5 Ω @ 750mA, 10V ±20V 150pF @ 25V 60V TO-226-3, TO-92-3 (TO-226AA)

TN0606N3-G Overview


A device's maximum input capacitance is 150pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 500mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.Its drain current is 0.5A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 16 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (3V 10V) to reduce its overall power consumption.

TN0606N3-G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 16 ns
a 60V drain to source voltage (Vdss)


TN0606N3-G Applications


There are a lot of Microchip Technology
TN0606N3-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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