TN0604N3-G-P013
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- Mfr.Part #
- TN0604N3-G-P013
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 700MA TO92-3
- Stock
- 2,013
- In Stock ：
- 2,013
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Feedback Cap-Max (Crss) :
- 50 pF
- Brand :
- Microchip Technology
- Drain to Source Voltage (Vdss) :
- 40V
- Power Dissipation-Max :
- 740mW Ta
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 1.5A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 453.59237mg
- Series :
- --
- Transistor Type :
- 1 N-Channel
- Element Configuration :
- Single
- Factory Lead Time :
- 6 Weeks
- Packaging :
- Tape and Box (TB)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- FET Feature :
- --
- Product Status :
- Active
- Mounting Style :
- Through Hole
- Fall Time (Typ) :
- 20 ns
- Product :
- MOSFET Small Signal
- Terminal Position :
- BOTTOM
- Supplier Device Package :
- TO-92-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 190pF @ 20V
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.75Ohm
- Power Dissipation (Max) :
- 740mW (Ta)
- JESD-30 Code :
- O-PBCY-T3
- Subcategory :
- MOSFETs
- Product Type :
- MOSFET
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Base Product Number :
- TN0604
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Width :
- 4.19mm
- Height :
- 5.33mm
- Length :
- 5.21mm
- Drain Current-Max (Abs) (ID) :
- 0.7A
- Current - Continuous Drain (Id) @ 25°C :
- 700mA Tj
- Rise Time :
- 6ns
- Published :
- 2013
- Vgs(th) (Max) @ Id :
- 1.6V @ 1mA
- Product Category :
- MOSFET
- Vgs (Max) :
- ±20V
- Manufacturer :
- Microchip
- Drain to Source Breakdown Voltage :
- 40V
- Package :
- Tape and Box (TB)
- Turn-Off Delay Time :
- 25 ns
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Number of Terminations :
- 3
- Channel Mode :
- Enhancement
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Turn On Delay Time :
- 10 ns
- Continuous Drain Current (ID) :
- 700mA
- Transistor Application :
- SWITCHING
- Datasheets
- TN0604N3-G-P013
,TO-226_straightlead.jpg)
N-Channel Tape & Box (TB) 750m Ω @ 1.5A, 10V ±20V 190pF @ 20V 40V TO-226-3, TO-92-3 (TO-226AA)
TN0604N3-G-P013 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 190pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 700mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 0.7A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (5V 10V), this device helps reduce its overall power consumption.
TN0604N3-G-P013 Features
a continuous drain current (ID) of 700mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
a 40V drain to source voltage (Vdss)
TN0604N3-G-P013 Applications
There are a lot of Microchip Technology
TN0604N3-G-P013 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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