TN0604N3-G
- Mfr.Part #
- TN0604N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 700MA TO92-3
- Stock
- 30,950
- In Stock :
- 30,950
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 700mA Tj
- Power Dissipation (Max) :
- 740mW (Ta)
- Number of Channels :
- 1
- Mounting Type :
- Through Hole
- Width :
- 4.19mm
- Channel Mode :
- Enhancement
- Operating Temperature Classification :
- Military
- Additional Feature :
- HIGH INPUT IMPEDANCE
- RoHS :
- Details
- Vgs (Max) :
- ±20V
- Mounting Style :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 0.7A
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Fall Time (Typ) :
- 20 ns
- FET Feature :
- -
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Minimum Operating Temperature :
- - 55 C
- Vgs(th) (Max) @ Id :
- 1.6V @ 1mA
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Radiation Hardening :
- No
- Product Type :
- MOSFET
- Element Configuration :
- Single
- Product Status :
- Active
- Published :
- 2013
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 1.5A, 10V
- Height :
- 5.33mm
- Type :
- Power MOSFET
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Rise Time :
- 6ns
- Transistor Type :
- 1 N-Channel
- Base Product Number :
- TN0604
- Turn On Delay Time :
- 10 ns
- Power Dissipation-Max :
- 740mW Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Package Type :
- TO-92
- Package :
- Bag
- Feedback Cap-Max (Crss) :
- 50 pF
- Rad Hardened :
- No
- Drain to Source Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Configuration :
- Single
- Series :
- -
- Transistor Polarity :
- N-Channel
- Number of Terminations :
- 3
- Power Dissipation :
- 740mW
- Polarity :
- N
- Number of Pins :
- 3
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 190pF @ 20V
- Terminal Position :
- BOTTOM
- Product Category :
- MOSFET
- Turn-Off Delay Time :
- 25 ns
- Length :
- 5.21mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Operating Temp Range :
- -55C to 150C
- Brand :
- Microchip Technology / Atmel
- Weight :
- 453.59237mg
- Drain-source On Resistance-Max :
- 0.75Ohm
- Channel Type :
- N
- Factory Lead Time :
- 6 Weeks
- Continuous Drain Current :
- 0.7(A)
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Drain-Source On-Volt :
- 40(V)
- Continuous Drain Current Id :
- 700
- Mounting :
- Through Hole
- Manufacturer :
- Microchip
- Supplier Device Package :
- TO-92-3
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 40 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate-Source Voltage (Max) :
- ±20(V)
- Continuous Drain Current (ID) :
- 700mA
- Datasheets
- TN0604N3-G
,TO-226_straightlead.jpg)
N-Channel Bulk 750m Ω @ 1.5A, 10V ±20V 190pF @ 20V 40 V TO-226-3, TO-92-3 (TO-226AA)
TN0604N3-G Overview
A device's maximum input capacitance is 190pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 700mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 0.7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40 V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
TN0604N3-G Features
a continuous drain current (ID) of 700mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
a 40 V drain to source voltage (Vdss)
TN0604N3-G Applications
There are a lot of Microchip Technology
TN0604N3-G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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