TN0604N3-G
- Mfr.Part #
- TN0604N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 700MA TO92-3
- Stock
- 30,950
- In Stock :
- 30,950
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 10 ns
- Product Status :
- Active
- Radiation Hardening :
- No
- Weight :
- 453.59237mg
- Packaging :
- Bulk
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Product Category :
- MOSFET
- Channel Type :
- N
- Drain to Source Voltage (Vdss) :
- 40 V
- Power Dissipation-Max :
- 740mW Ta
- Gate-Source Voltage (Max) :
- ±20(V)
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Package Type :
- TO-92
- Fall Time (Typ) :
- 20 ns
- Configuration :
- Single
- Continuous Drain Current :
- 0.7(A)
- Power Dissipation :
- 740mW
- Maximum Operating Temperature :
- + 150 C
- Drain-Source On-Volt :
- 40(V)
- Height :
- 5.33mm
- Mounting Style :
- Through Hole
- Type :
- Power MOSFET
- Pin Count :
- 3
- FET Type :
- N-Channel
- Operating Temp Range :
- -55C to 150C
- Feedback Cap-Max (Crss) :
- 50 pF
- Mount :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Mounting Type :
- Through Hole
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2013
- FET Feature :
- -
- Factory Lead Time :
- 6 Weeks
- Rad Hardened :
- No
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- HIGH INPUT IMPEDANCE
- JESD-609 Code :
- e3
- Minimum Operating Temperature :
- - 55 C
- Package :
- Bag
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 1.5A, 10V
- Product Type :
- MOSFET
- Polarity :
- N
- Drain to Source Breakdown Voltage :
- 40V
- Series :
- -
- Length :
- 5.21mm
- Drain Current-Max (Abs) (ID) :
- 0.7A
- Manufacturer :
- Microchip
- Number of Pins :
- 3
- Channel Mode :
- Enhancement
- Continuous Drain Current Id :
- 700
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature Classification :
- Military
- Drain-source On Resistance-Max :
- 0.75Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 700mA Tj
- Base Product Number :
- TN0604
- Turn-Off Delay Time :
- 25 ns
- Rise Time :
- 6ns
- Mounting :
- Through Hole
- RoHS :
- Details
- Width :
- 4.19mm
- Continuous Drain Current (ID) :
- 700mA
- Brand :
- Microchip Technology / Atmel
- Terminal Position :
- BOTTOM
- Power Dissipation (Max) :
- 740mW (Ta)
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Polarity :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Supplier Device Package :
- TO-92-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 190pF @ 20V
- Vgs(th) (Max) @ Id :
- 1.6V @ 1mA
- Number of Terminations :
- 3
- Datasheets
- TN0604N3-G
,TO-226_straightlead.jpg)
N-Channel Bulk 750m Ω @ 1.5A, 10V ±20V 190pF @ 20V 40 V TO-226-3, TO-92-3 (TO-226AA)
TN0604N3-G Overview
A device's maximum input capacitance is 190pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 700mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 0.7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40 V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
TN0604N3-G Features
a continuous drain current (ID) of 700mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
a 40 V drain to source voltage (Vdss)
TN0604N3-G Applications
There are a lot of Microchip Technology
TN0604N3-G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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