TN0604N3-G

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Mfr.Part #
TN0604N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 40V 700MA TO92-3
Stock
30,950
In Stock :
30,950

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
TN0604
Product Status :
Active
Supplier Device Package :
TO-92-3
Fall Time (Typ) :
20 ns
Type :
Power MOSFET
Transistor Type :
1 N-Channel
Continuous Drain Current (ID) :
700mA
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 20V
Drain-Source On-Volt :
40(V)
Continuous Drain Current Id :
700
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Rise Time :
6ns
Number of Elements :
1
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Number of Pins :
3
Operating Mode :
ENHANCEMENT MODE
Polarity :
N
Power Dissipation :
740mW
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Mounting Style :
Through Hole
ECCN Code :
EAR99
Mounting Type :
Through Hole
Height :
5.33mm
Product Category :
MOSFET
Feedback Cap-Max (Crss) :
50 pF
FET Feature :
-
Factory Lead Time :
6 Weeks
Gate-Source Voltage (Max) :
±20(V)
Packaging :
Bulk
Drain to Source Voltage (Vdss) :
40 V
Length :
5.21mm
Configuration :
Single
Product Type :
MOSFET
Transistor Polarity :
N-Channel
Channel Type :
N
Power Dissipation (Max) :
740mW (Ta)
Maximum Operating Temperature :
+ 150 C
Package :
Bag
Operating Temperature Classification :
Military
Continuous Drain Current :
0.7(A)
JESD-609 Code :
e3
FET Type :
N-Channel
Package Type :
TO-92
Number of Terminations :
3
Terminal Position :
BOTTOM
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Additional Feature :
HIGH INPUT IMPEDANCE
Mounting :
Through Hole
Channel Mode :
Enhancement
Terminal Finish :
Matte Tin (Sn)
Series :
-
Width :
4.19mm
Drain to Source Breakdown Voltage :
40V
Weight :
453.59237mg
Rad Hardened :
No
Turn On Delay Time :
10 ns
Drain-source On Resistance-Max :
0.75Ohm
Vgs(th) (Max) @ Id :
1.6V @ 1mA
Published :
2013
Number of Channels :
1
RoHS :
Details
Turn-Off Delay Time :
25 ns
Power Dissipation-Max :
740mW Ta
Current - Continuous Drain (Id) @ 25°C :
700mA Tj
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Operating Temp Range :
-55C to 150C
Brand :
Microchip Technology / Atmel
Pin Count :
3
Drain Current-Max (Abs) (ID) :
0.7A
Rds On (Max) @ Id, Vgs :
750m Ω @ 1.5A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Manufacturer :
Microchip
Datasheets
TN0604N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN0604N3-G from Chip IC,where excellence meets affordability. This product stands out with its Type:Power MOSFET, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Number of Channels:1, TN0604N3-G pinout, TN0604N3-G datasheet PDF, TN0604N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN0604N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN0604N3-G


N-Channel Bulk 750m Ω @ 1.5A, 10V ±20V 190pF @ 20V 40 V TO-226-3, TO-92-3 (TO-226AA)

TN0604N3-G Overview


A device's maximum input capacitance is 190pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 700mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 0.7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40 V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.

TN0604N3-G Features


a continuous drain current (ID) of 700mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
a 40 V drain to source voltage (Vdss)


TN0604N3-G Applications


There are a lot of Microchip Technology
TN0604N3-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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