TN0604N3-G

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Mfr.Part #
TN0604N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 40V 700MA TO92-3
Stock
30,950
In Stock :
30,950

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Channel Mode :
Enhancement
Number of Channels :
1
Transistor Type :
1 N-Channel
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
BOTTOM
Turn On Delay Time :
10 ns
Drain-source On Resistance-Max :
0.75Ohm
Pin Count :
3
Power Dissipation (Max) :
740mW (Ta)
Weight :
453.59237mg
Terminal Finish :
Matte Tin (Sn)
Factory Lead Time :
6 Weeks
Drain Current-Max (Abs) (ID) :
0.7A
Gate-Source Voltage (Max) :
±20(V)
Continuous Drain Current :
0.7(A)
Operating Temperature Classification :
Military
Published :
2013
Polarity :
N
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Mount :
Through Hole
Base Product Number :
TN0604
Number of Terminations :
3
Product Status :
Active
Channel Type :
N
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Brand :
Microchip Technology / Atmel
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Series :
-
Operating Temp Range :
-55C to 150C
Mounting :
Through Hole
Radiation Hardening :
No
Product Type :
MOSFET
Continuous Drain Current (ID) :
700mA
Length :
5.21mm
Power Dissipation-Max :
740mW Ta
Type :
Power MOSFET
Turn-Off Delay Time :
25 ns
Manufacturer :
Microchip
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
700mA Tj
Width :
4.19mm
Rise Time :
6ns
Mounting Type :
Through Hole
Product Category :
MOSFET
Element Configuration :
Single
Power Dissipation :
740mW
Transistor Application :
SWITCHING
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Minimum Operating Temperature :
- 55 C
RoHS :
Details
Drain to Source Breakdown Voltage :
40V
Height :
5.33mm
Rds On (Max) @ Id, Vgs :
750m Ω @ 1.5A, 10V
Package Type :
TO-92
Continuous Drain Current Id :
700
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
Single
JESD-609 Code :
e3
Packaging :
Bulk
FET Feature :
-
Vgs(th) (Max) @ Id :
1.6V @ 1mA
Drain-Source On-Volt :
40(V)
Package :
Bag
Additional Feature :
HIGH INPUT IMPEDANCE
Transistor Polarity :
N-Channel
Number of Elements :
1
Number of Pins :
3
Supplier Device Package :
TO-92-3
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 20V
Maximum Operating Temperature :
+ 150 C
Feedback Cap-Max (Crss) :
50 pF
Fall Time (Typ) :
20 ns
Drain to Source Voltage (Vdss) :
40 V
Rad Hardened :
No
Mounting Style :
Through Hole
Datasheets
TN0604N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN0604N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Type:Power MOSFET, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Pins:3, TN0604N3-G pinout, TN0604N3-G datasheet PDF, TN0604N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN0604N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN0604N3-G


N-Channel Bulk 750m Ω @ 1.5A, 10V ±20V 190pF @ 20V 40 V TO-226-3, TO-92-3 (TO-226AA)

TN0604N3-G Overview


A device's maximum input capacitance is 190pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 700mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 0.7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40 V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.

TN0604N3-G Features


a continuous drain current (ID) of 700mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
a 40 V drain to source voltage (Vdss)


TN0604N3-G Applications


There are a lot of Microchip Technology
TN0604N3-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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