TN0604N3-G
- Mfr.Part #
- TN0604N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 700MA TO92-3
- Stock
- 30,950
- In Stock :
- 30,950
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 1.5A, 10V
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 740mW Ta
- Vgs(th) (Max) @ Id :
- 1.6V @ 1mA
- Continuous Drain Current Id :
- 700
- Continuous Drain Current (ID) :
- 700mA
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.75Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 700mA Tj
- Feedback Cap-Max (Crss) :
- 50 pF
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current :
- 0.7(A)
- Published :
- 2013
- Rise Time :
- 6ns
- RoHS :
- Details
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Fall Time (Typ) :
- 20 ns
- Number of Channels :
- 1
- Product Type :
- MOSFET
- Number of Pins :
- 3
- Length :
- 5.21mm
- Factory Lead Time :
- 6 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 453.59237mg
- Package Type :
- TO-92
- Operating Temperature Classification :
- Military
- Mount :
- Through Hole
- Package :
- Bag
- Terminal Position :
- BOTTOM
- Vgs (Max) :
- ±20V
- Maximum Operating Temperature :
- + 150 C
- FET Type :
- N-Channel
- Packaging :
- Bulk
- Power Dissipation (Max) :
- 740mW (Ta)
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 5.33mm
- Drain to Source Voltage (Vdss) :
- 40 V
- Configuration :
- Single
- Turn On Delay Time :
- 10 ns
- Transistor Type :
- 1 N-Channel
- FET Feature :
- -
- Manufacturer :
- Microchip
- Drain to Source Breakdown Voltage :
- 40V
- Mounting Type :
- Through Hole
- Power Dissipation :
- 740mW
- Rad Hardened :
- No
- Number of Elements :
- 1
- Polarity :
- N
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-92-3
- JESD-609 Code :
- e3
- Minimum Operating Temperature :
- - 55 C
- Transistor Polarity :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-Source On-Volt :
- 40(V)
- Width :
- 4.19mm
- Drain Current-Max (Abs) (ID) :
- 0.7A
- Brand :
- Microchip Technology / Atmel
- Channel Type :
- N
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Channel Mode :
- Enhancement
- Mounting :
- Through Hole
- Gate-Source Voltage (Max) :
- ±20(V)
- Product Status :
- Active
- Input Capacitance (Ciss) (Max) @ Vds :
- 190pF @ 20V
- Mounting Style :
- Through Hole
- Turn-Off Delay Time :
- 25 ns
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temp Range :
- -55C to 150C
- Product Category :
- MOSFET
- Series :
- -
- Type :
- Power MOSFET
- Base Product Number :
- TN0604
- Datasheets
- TN0604N3-G
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N-Channel Bulk 750m Ω @ 1.5A, 10V ±20V 190pF @ 20V 40 V TO-226-3, TO-92-3 (TO-226AA)
TN0604N3-G Overview
A device's maximum input capacitance is 190pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 700mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 0.7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40 V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
TN0604N3-G Features
a continuous drain current (ID) of 700mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
a 40 V drain to source voltage (Vdss)
TN0604N3-G Applications
There are a lot of Microchip Technology
TN0604N3-G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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