TN0604N3-G

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Mfr.Part #
TN0604N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 40V 700MA TO92-3
Stock
30,950
In Stock :
30,950

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
700mA Tj
Power Dissipation (Max) :
740mW (Ta)
Number of Channels :
1
Mounting Type :
Through Hole
Width :
4.19mm
Channel Mode :
Enhancement
Operating Temperature Classification :
Military
Additional Feature :
HIGH INPUT IMPEDANCE
RoHS :
Details
Vgs (Max) :
±20V
Mounting Style :
Through Hole
Drain Current-Max (Abs) (ID) :
0.7A
ECCN Code :
EAR99
Packaging :
Bulk
Fall Time (Typ) :
20 ns
FET Feature :
-
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Minimum Operating Temperature :
- 55 C
Vgs(th) (Max) @ Id :
1.6V @ 1mA
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
Matte Tin (Sn)
Radiation Hardening :
No
Product Type :
MOSFET
Element Configuration :
Single
Product Status :
Active
Published :
2013
Rds On (Max) @ Id, Vgs :
750m Ω @ 1.5A, 10V
Height :
5.33mm
Type :
Power MOSFET
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Pin Count :
3
Rise Time :
6ns
Transistor Type :
1 N-Channel
Base Product Number :
TN0604
Turn On Delay Time :
10 ns
Power Dissipation-Max :
740mW Ta
Gate to Source Voltage (Vgs) :
20V
Package Type :
TO-92
Package :
Bag
Feedback Cap-Max (Crss) :
50 pF
Rad Hardened :
No
Drain to Source Breakdown Voltage :
40V
JESD-609 Code :
e3
Configuration :
Single
Series :
-
Transistor Polarity :
N-Channel
Number of Terminations :
3
Power Dissipation :
740mW
Polarity :
N
Number of Pins :
3
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 20V
Terminal Position :
BOTTOM
Product Category :
MOSFET
Turn-Off Delay Time :
25 ns
Length :
5.21mm
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Operating Temp Range :
-55C to 150C
Brand :
Microchip Technology / Atmel
Weight :
453.59237mg
Drain-source On Resistance-Max :
0.75Ohm
Channel Type :
N
Factory Lead Time :
6 Weeks
Continuous Drain Current :
0.7(A)
Maximum Operating Temperature :
+ 150 C
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Drain-Source On-Volt :
40(V)
Continuous Drain Current Id :
700
Mounting :
Through Hole
Manufacturer :
Microchip
Supplier Device Package :
TO-92-3
Number of Elements :
1
Drain to Source Voltage (Vdss) :
40 V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate-Source Voltage (Max) :
±20(V)
Continuous Drain Current (ID) :
700mA
Datasheets
TN0604N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN0604N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Type:Power MOSFET, Number of Terminations:3, Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), TN0604N3-G pinout, TN0604N3-G datasheet PDF, TN0604N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN0604N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN0604N3-G


N-Channel Bulk 750m Ω @ 1.5A, 10V ±20V 190pF @ 20V 40 V TO-226-3, TO-92-3 (TO-226AA)

TN0604N3-G Overview


A device's maximum input capacitance is 190pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 700mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 0.7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40 V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.

TN0604N3-G Features


a continuous drain current (ID) of 700mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
a 40 V drain to source voltage (Vdss)


TN0604N3-G Applications


There are a lot of Microchip Technology
TN0604N3-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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