TN0604N3-G

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Mfr.Part #
TN0604N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 40V 700MA TO92-3
Stock
30,950
In Stock :
30,950

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
10 ns
Product Status :
Active
Radiation Hardening :
No
Weight :
453.59237mg
Packaging :
Bulk
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Product Category :
MOSFET
Channel Type :
N
Drain to Source Voltage (Vdss) :
40 V
Power Dissipation-Max :
740mW Ta
Gate-Source Voltage (Max) :
±20(V)
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Element Configuration :
Single
ECCN Code :
EAR99
Package Type :
TO-92
Fall Time (Typ) :
20 ns
Configuration :
Single
Continuous Drain Current :
0.7(A)
Power Dissipation :
740mW
Maximum Operating Temperature :
+ 150 C
Drain-Source On-Volt :
40(V)
Height :
5.33mm
Mounting Style :
Through Hole
Type :
Power MOSFET
Pin Count :
3
FET Type :
N-Channel
Operating Temp Range :
-55C to 150C
Feedback Cap-Max (Crss) :
50 pF
Mount :
Through Hole
Transistor Type :
1 N-Channel
Mounting Type :
Through Hole
Terminal Finish :
Matte Tin (Sn)
Published :
2013
FET Feature :
-
Factory Lead Time :
6 Weeks
Rad Hardened :
No
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
RoHS Status :
ROHS3 Compliant
Additional Feature :
HIGH INPUT IMPEDANCE
JESD-609 Code :
e3
Minimum Operating Temperature :
- 55 C
Package :
Bag
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
750m Ω @ 1.5A, 10V
Product Type :
MOSFET
Polarity :
N
Drain to Source Breakdown Voltage :
40V
Series :
-
Length :
5.21mm
Drain Current-Max (Abs) (ID) :
0.7A
Manufacturer :
Microchip
Number of Pins :
3
Channel Mode :
Enhancement
Continuous Drain Current Id :
700
Operating Mode :
ENHANCEMENT MODE
Operating Temperature Classification :
Military
Drain-source On Resistance-Max :
0.75Ohm
Current - Continuous Drain (Id) @ 25°C :
700mA Tj
Base Product Number :
TN0604
Turn-Off Delay Time :
25 ns
Rise Time :
6ns
Mounting :
Through Hole
RoHS :
Details
Width :
4.19mm
Continuous Drain Current (ID) :
700mA
Brand :
Microchip Technology / Atmel
Terminal Position :
BOTTOM
Power Dissipation (Max) :
740mW (Ta)
Gate to Source Voltage (Vgs) :
20V
Transistor Polarity :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Number of Channels :
1
Supplier Device Package :
TO-92-3
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 20V
Vgs(th) (Max) @ Id :
1.6V @ 1mA
Number of Terminations :
3
Datasheets
TN0604N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN0604N3-G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Type:Power MOSFET, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Number of Terminations:3, TN0604N3-G pinout, TN0604N3-G datasheet PDF, TN0604N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN0604N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN0604N3-G


N-Channel Bulk 750m Ω @ 1.5A, 10V ±20V 190pF @ 20V 40 V TO-226-3, TO-92-3 (TO-226AA)

TN0604N3-G Overview


A device's maximum input capacitance is 190pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 700mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 0.7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40 V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.

TN0604N3-G Features


a continuous drain current (ID) of 700mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
a 40 V drain to source voltage (Vdss)


TN0604N3-G Applications


There are a lot of Microchip Technology
TN0604N3-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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