TN0604N3-G

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Mfr.Part #
TN0604N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 40V 700MA TO92-3
Stock
30,950
In Stock :
30,950

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
BOTTOM
Transistor Element Material :
SILICON
Minimum Operating Temperature :
- 55 C
Mounting Type :
Through Hole
Package Type :
TO-92
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
700mA Tj
Operating Temp Range :
-55C to 150C
Power Dissipation :
740mW
Operating Mode :
ENHANCEMENT MODE
Mounting Style :
Through Hole
Pin Count :
3
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.75Ohm
Product Type :
MOSFET
Power Dissipation-Max :
740mW Ta
ECCN Code :
EAR99
Supplier Device Package :
TO-92-3
Terminal Finish :
Matte Tin (Sn)
Brand :
Microchip Technology / Atmel
Channel Type :
N
Number of Elements :
1
Rad Hardened :
No
Length :
5.21mm
Base Product Number :
TN0604
Series :
-
Radiation Hardening :
No
Fall Time (Typ) :
20 ns
Drain Current-Max (Abs) (ID) :
0.7A
Drain-Source On-Volt :
40(V)
Packaging :
Bulk
Mounting :
Through Hole
Turn On Delay Time :
10 ns
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Transistor Application :
SWITCHING
FET Feature :
-
Operating Temperature Classification :
Military
Transistor Type :
1 N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 20V
Continuous Drain Current Id :
700
Element Configuration :
Single
Configuration :
Single
Polarity :
N
Rise Time :
6ns
Drain to Source Breakdown Voltage :
40V
Turn-Off Delay Time :
25 ns
Number of Terminations :
3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
FET Type :
N-Channel
Height :
5.33mm
Number of Pins :
3
Published :
2013
Continuous Drain Current (ID) :
700mA
Manufacturer :
Microchip
Feedback Cap-Max (Crss) :
50 pF
Type :
Power MOSFET
Gate-Source Voltage (Max) :
±20(V)
Product Category :
MOSFET
Power Dissipation (Max) :
740mW (Ta)
Mount :
Through Hole
Additional Feature :
HIGH INPUT IMPEDANCE
Weight :
453.59237mg
Vgs(th) (Max) @ Id :
1.6V @ 1mA
Vgs (Max) :
±20V
Width :
4.19mm
Factory Lead Time :
6 Weeks
RoHS :
Details
Product Status :
Active
Rds On (Max) @ Id, Vgs :
750m Ω @ 1.5A, 10V
Number of Channels :
1
Package :
Bag
Maximum Operating Temperature :
+ 150 C
RoHS Status :
ROHS3 Compliant
Continuous Drain Current :
0.7(A)
Drain to Source Voltage (Vdss) :
40 V
Gate to Source Voltage (Vgs) :
20V
Channel Mode :
Enhancement
JESD-609 Code :
e3
Datasheets
TN0604N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN0604N3-G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Pins:3, Type:Power MOSFET, Number of Channels:1, TN0604N3-G pinout, TN0604N3-G datasheet PDF, TN0604N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN0604N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN0604N3-G


N-Channel Bulk 750m Ω @ 1.5A, 10V ±20V 190pF @ 20V 40 V TO-226-3, TO-92-3 (TO-226AA)

TN0604N3-G Overview


A device's maximum input capacitance is 190pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 700mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 0.7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40 V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.

TN0604N3-G Features


a continuous drain current (ID) of 700mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
a 40 V drain to source voltage (Vdss)


TN0604N3-G Applications


There are a lot of Microchip Technology
TN0604N3-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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