TN0604N3-G
- Mfr.Part #
- TN0604N3-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 700MA TO92-3
- Stock
- 30,950
- In Stock :
- 30,950
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Product Status :
- Active
- Channel Mode :
- Enhancement
- Mounting Style :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Rad Hardened :
- No
- Drain to Source Breakdown Voltage :
- 40V
- Package :
- Bag
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 740mW (Ta)
- Product Category :
- MOSFET
- ECCN Code :
- EAR99
- Transistor Polarity :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Turn-Off Delay Time :
- 25 ns
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 40 V
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Type :
- Power MOSFET
- Minimum Operating Temperature :
- - 55 C
- Length :
- 5.21mm
- Vgs(th) (Max) @ Id :
- 1.6V @ 1mA
- Feedback Cap-Max (Crss) :
- 50 pF
- Power Dissipation :
- 740mW
- Packaging :
- Bulk
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current Id :
- 700
- Channel Type :
- N
- Drain Current-Max (Abs) (ID) :
- 0.7A
- Fall Time (Typ) :
- 20 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Mounting :
- Through Hole
- Number of Channels :
- 1
- Height :
- 5.33mm
- Base Product Number :
- TN0604
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 1.5A, 10V
- Gate-Source Voltage (Max) :
- ±20(V)
- Transistor Type :
- 1 N-Channel
- Series :
- -
- Additional Feature :
- HIGH INPUT IMPEDANCE
- Brand :
- Microchip Technology / Atmel
- Width :
- 4.19mm
- Product Type :
- MOSFET
- Polarity :
- N
- Rise Time :
- 6ns
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.75Ohm
- Number of Pins :
- 3
- Configuration :
- Single
- Vgs (Max) :
- ±20V
- Package Type :
- TO-92
- Operating Temp Range :
- -55C to 150C
- Transistor Application :
- SWITCHING
- Drain-Source On-Volt :
- 40(V)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Factory Lead Time :
- 6 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 190pF @ 20V
- Terminal Position :
- BOTTOM
- RoHS :
- Details
- Manufacturer :
- Microchip
- Continuous Drain Current :
- 0.7(A)
- Published :
- 2013
- Number of Elements :
- 1
- Operating Temperature Classification :
- Military
- Continuous Drain Current (ID) :
- 700mA
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-92-3
- Element Configuration :
- Single
- Weight :
- 453.59237mg
- FET Feature :
- -
- Power Dissipation-Max :
- 740mW Ta
- Turn On Delay Time :
- 10 ns
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 700mA Tj
- Datasheets
- TN0604N3-G
,TO-226_straightlead.jpg)
N-Channel Bulk 750m Ω @ 1.5A, 10V ±20V 190pF @ 20V 40 V TO-226-3, TO-92-3 (TO-226AA)
TN0604N3-G Overview
A device's maximum input capacitance is 190pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 700mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 0.7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40 V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
TN0604N3-G Features
a continuous drain current (ID) of 700mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
a 40 V drain to source voltage (Vdss)
TN0604N3-G Applications
There are a lot of Microchip Technology
TN0604N3-G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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