TN0604N3-G

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Mfr.Part #
TN0604N3-G
Manufacturer
Microchip Technology
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
MOSFET N-CH 40V 700MA TO92-3
Stock
30,950
In Stock :
30,950

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
750m Ω @ 1.5A, 10V
ECCN Code :
EAR99
Power Dissipation-Max :
740mW Ta
Vgs(th) (Max) @ Id :
1.6V @ 1mA
Continuous Drain Current Id :
700
Continuous Drain Current (ID) :
700mA
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.75Ohm
Current - Continuous Drain (Id) @ 25°C :
700mA Tj
Feedback Cap-Max (Crss) :
50 pF
Terminal Finish :
Matte Tin (Sn)
Continuous Drain Current :
0.7(A)
Published :
2013
Rise Time :
6ns
RoHS :
Details
Radiation Hardening :
No
Element Configuration :
Single
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Fall Time (Typ) :
20 ns
Number of Channels :
1
Product Type :
MOSFET
Number of Pins :
3
Length :
5.21mm
Factory Lead Time :
6 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
453.59237mg
Package Type :
TO-92
Operating Temperature Classification :
Military
Mount :
Through Hole
Package :
Bag
Terminal Position :
BOTTOM
Vgs (Max) :
±20V
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
Packaging :
Bulk
Power Dissipation (Max) :
740mW (Ta)
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Height :
5.33mm
Drain to Source Voltage (Vdss) :
40 V
Configuration :
Single
Turn On Delay Time :
10 ns
Transistor Type :
1 N-Channel
FET Feature :
-
Manufacturer :
Microchip
Drain to Source Breakdown Voltage :
40V
Mounting Type :
Through Hole
Power Dissipation :
740mW
Rad Hardened :
No
Number of Elements :
1
Polarity :
N
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
TO-92-3
JESD-609 Code :
e3
Minimum Operating Temperature :
- 55 C
Transistor Polarity :
N-Channel
Gate to Source Voltage (Vgs) :
20V
Drain-Source On-Volt :
40(V)
Width :
4.19mm
Drain Current-Max (Abs) (ID) :
0.7A
Brand :
Microchip Technology / Atmel
Channel Type :
N
Transistor Element Material :
SILICON
Pin Count :
3
Additional Feature :
HIGH INPUT IMPEDANCE
Channel Mode :
Enhancement
Mounting :
Through Hole
Gate-Source Voltage (Max) :
±20(V)
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 20V
Mounting Style :
Through Hole
Turn-Off Delay Time :
25 ns
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Operating Temp Range :
-55C to 150C
Product Category :
MOSFET
Series :
-
Type :
Power MOSFET
Base Product Number :
TN0604
Datasheets
TN0604N3-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN0604N3-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Type:Power MOSFET, TN0604N3-G pinout, TN0604N3-G datasheet PDF, TN0604N3-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN0604N3-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN0604N3-G


N-Channel Bulk 750m Ω @ 1.5A, 10V ±20V 190pF @ 20V 40 V TO-226-3, TO-92-3 (TO-226AA)

TN0604N3-G Overview


A device's maximum input capacitance is 190pF @ 20V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 700mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=40V, and this device has a drain-to-source breakdown voltage of 40V voltage.Its drain current is 0.7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40 V drain to source voltage (Vdss).This device uses no drive voltage (5V 10V) to reduce its overall power consumption.

TN0604N3-G Features


a continuous drain current (ID) of 700mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
a 40 V drain to source voltage (Vdss)


TN0604N3-G Applications


There are a lot of Microchip Technology
TN0604N3-G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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