TN0604N3-G-P005

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

750m Ω @ 1.5A, 10V

Drain-source On Resistance-Max :

0.75Ohm

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 20V

Drain Current-Max (Abs) (ID) :

0.7A

Terminal Position :

BOTTOM

Factory Lead Time :

6 Weeks

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

740mW Ta

Number of Terminations :

3

Continuous Drain Current (ID) :

700mA

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current - Continuous Drain (Id) @ 25°C :

700mA Tj

Weight :

453.59237mg

DS Breakdown Voltage-Min :

40V

Product Type :

MOSFET

Base Product Number :

TN0604

JESD-30 Code :

O-PBCY-T3

Manufacturer :

Microchip

Product Category :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+ 150 C

Package :

Tape and Reel (TR)

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Additional Feature :

HIGH INPUT IMPEDANCE

FET Feature :

--

Mounting Style :

Through Hole

Series :

--

Subcategory :

MOSFETs

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Feedback Cap-Max (Crss) :

50 pF

Number of Channels :

1

Published :

2013

RoHS :

Details

Drain to Source Voltage (Vdss) :

40V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package :

TO-92-3

Transistor Polarity :

N-Channel

Mount :

Through Hole

Transistor Type :

1 N-Channel

RoHS Status :

ROHS3 Compliant

Channel Mode :

Enhancement

Power Dissipation (Max) :

740mW (Ta)

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Brand :

Microchip Technology

Vgs(th) (Max) @ Id :

1.6V @ 1mA

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Product Status :

Active