TK65S04N1L,LQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

3.3MOhm

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

40V

FET Type :

N-Channel

Turn On Delay Time :

20 ns

Packaging :

Cut Tape (CT)

Number of Channels :

1

Vgs (Max) :

±20V

Rise Time :

8ns

Max Operating Temperature :

175°C

Operating Temperature :

175°C TJ

Continuous Drain Current (ID) :

65A

Drain to Source Breakdown Voltage :

40V

Current - Continuous Drain (Id) @ 25°C :

65A Ta

Power Dissipation-Max :

107W Tc

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

4.3mOhm @ 32.5A, 10V

Weight :

3.949996g

RoHS Status :

RoHS Compliant

Series :

U-MOSVIII-H

Published :

2015

Fall Time (Typ) :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

2550pF @ 10V

Mount :

Surface Mount

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Supplier Device Package :

DPAK+

Input Capacitance :

2.55nF

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

51 ns

Vgs(th) (Max) @ Id :

2.5V @ 300μA

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On Max :

4.3 mΩ

Min Operating Temperature :

-55°C