TK65E10N1,S1X

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Mfr.Part #
TK65E10N1,S1X
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N CH 100V 148A TO220
Stock
7,729
In Stock :
7,729

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds :
5400pF @ 50V
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
81nC @ 10V
Continuous Drain Current (ID) :
148A
Operating Temperature :
150°C TJ
Rds On (Max) @ Id, Vgs :
4.8m Ω @ 32.5A, 10V
Mounting Type :
Through Hole
Vgs (Max) :
±20V
Power Dissipation-Max :
192W Tc
Capacitance :
5.4nF
Mount :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Current - Continuous Drain (Id) @ 25°C :
148A Ta
RoHS Status :
RoHS Compliant
Factory Lead Time :
12 Weeks
FET Type :
N-Channel
Series :
U-MOSVIII-H
Published :
2014
Datasheets
TK65E10N1,S1X
Introducing Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK65E10N1,S1X from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, TK65E10N1,S1X pinout, TK65E10N1,S1X datasheet PDF, TK65E10N1,S1X amp .Beyond Transistors - FETs, MOSFETs - Single Toshiba Electronic Devices and Storage Corporation TK65E10N1,S1X ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation TK65E10N1,S1X


N-Channel Tube 4.8m Ω @ 32.5A, 10V ±20V 5400pF @ 50V 81nC @ 10V 100V TO-220-3

TK65E10N1,S1X Overview


A device's maximal input capacitance is 5400pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 148A, which represents the maximum continuous current it can conduct.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

TK65E10N1,S1X Features


a continuous drain current (ID) of 148A
a 100V drain to source voltage (Vdss)


TK65E10N1,S1X Applications


There are a lot of Toshiba Semiconductor and Storage
TK65E10N1,S1X applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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