TK65G10N1,RQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Resistance :

3.8mOhm

Power Dissipation-Max :

156W Tc

Input Capacitance :

5.4nF

Gate to Source Voltage (Vgs) :

20V

Weight :

3.949996g

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5400pF @ 50V

Rds On Max :

4.5 mΩ

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Published :

2014

Operating Temperature :

150°C TJ

Drain to Source Voltage (Vdss) :

100V

Fall Time (Typ) :

26 ns

Rise Time :

19ns

Number of Channels :

1

Supplier Device Package :

D2PAK

Mount :

Surface Mount

Packaging :

Cut Tape (CT)

Current - Continuous Drain (Id) @ 25°C :

65A Ta

Series :

U-MOSVIII-H

Element Configuration :

Single

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

44 ns

Turn-Off Delay Time :

85 ns

Continuous Drain Current (ID) :

65A

Rds On (Max) @ Id, Vgs :

4.5mOhm @ 32.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain to Source Breakdown Voltage :

100V

Min Operating Temperature :

-55°C